An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms von Bakhadirkhanov, M. K., Ibodullaev, Sh. N., Zikrillaev, N. F., Koveshnikov, S. V.

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Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion von Bakhadirkhanov, M. K., Iliev, Kh. M., Tursunov, M. O., Isamov, S. B., Koveshnikov, S. V., Majitov, M. Kh

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Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm von Bakhadirkhanov, M. K., Isamov, S. B., Ibodullaev, Sh. N., Koveshnikov, S. V., Norkulov, N.

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Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms von Bakhadirkhanov, M. K., Isamov, S. B., Zikrillaev, N. F., Iliev, Kh. M., Mavlonov, G. Kh, Koveshnikov, S. V., Ibodullaev, Sh. N.

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Specific features of magnetoresistance in overcompensated manganese-doped silicon von Bakhadirkhanov, M. K., Mavlonov, G. H., Iliev, X. M., Ayupov, K. S., Sattarov, O. E., Tachilin, C. A.

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Negative magnetoresistance in silicon with manganese-atom complexes [Mn]{sub 4} von Bakhadirkhanov, M. K., Ayupov, K. S., Mavlyanov, G. H., Isamov, S. B.

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Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4 von Bakhadirkhanov, M. K., Ayupov, K. S., Mavlyanov, G. H., Isamov, S. B.

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Spectral range of current self-oscillation in manganese-doped silicon von Bakhadirkhanov, M. K., Zikrillaev, N. F., Ayupov, K. S., Bobonov, D. T., Kadirova, F. A., Il’khomzhonov, N.

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Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon von Bakhadirkhanov, M. K., Askarov, Sh. I., Norkulov, N.

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Mechanism of Two-Electron Exchange between Neutral and Ionized Centres of Tin in PbS1−xSex Solid Solutions von Nasredinov, F. S., Turaev, E. Yu, Seregin, P. P., Rakhmatullaev, H. B., Bakhadirkhanov, M. K.

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Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon von Bakhadirkhanov, M. K., Askarov, Sh. I., Norkulov, N.

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Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon von BAKHADIRKHANOV, M. K, ASKAROV, SH. I, NORKULOV, N

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Mechanism of Two-Electron Exchange between Neutral and Ionized Centres of Tin in PbS1−xSex Solid Solutions von Nasredinov, F. S., Turaev, E. Yu, Seregin, P. P., Rakhmatullaev, H. B., Bakhadirkhanov, M. K.

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Magneto-sensors on the basis of negative magnetic resistance von Bakhadirichanov, M.K., Iliev, K.M., Ayupov, K.S., Sattorov, O.E., Qurbonova, U.Kh, Mavlonov, A.Sh

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