Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates von Baker, Troy J., Haskell, Benjamin A., Wu, Feng, Fini, Paul T., Speck, James S., Nakamura, Shuji

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Free-standing carbon-doped semi-insulating GaN wafer grown by HVPE von Lai, Yun, Wang, Ding, Kong, Qinhao, Luo, Xiaoju, Tang, Jinfeng, Liu, Rensuo, Hou, Fei, Wang, Xianying, Baker, Troy J.

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Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates von Chakraborty, Arpan, Baker, Troy J., Haskell, Benjamin A., Wu, Feng, Speck, James S., Denbaars>, Steven P., Nakamura, Shuji, Mishra, Umesh K.

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Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates von Baker, Troy J., Haskell, Benjamin A., Wu, Feng, Speck, James S., Nakamura, Shuji

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Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN von Masui, Hisashi, Baker, Troy J., Iza, Michael, Zhong, Hong, Nakamura, Shuji, DenBaars, Steven P.

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Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy von Newman, Scott A., Kamber, Derrick S., Baker, Troy J., Wu, Yuan, Wu, Feng, Chen, Zhen, Namakura, Shuji, Speck, James S., DenBaars, Steven P.

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First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes von Masui, Hisashi, Baker, Troy J., Sharma, Rajat, Pattison, P. Morgan, Iza, Michael, Zhong, Hong, Nakamura, Shuji, DenBaars, Steven P.

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Spontaneous formation of {1 0 1} InGaN quantum wells on a (1 1 2) GaN template and their electroluminescence characteristics von Masui, Hisashi, Kamber, Derrick S, Brinkley, Stuart E, Wu, Feng, Baker, Troy J, Zhong, Hong, Iza, Michael, Speck, James S, Nakamura, Shuji, DenBaars, Steven P

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Plane Dependent Growth of GaN in Supercritical Basic Ammonia von Saito, Makoto, Kamber, Derrick S., Baker, Troy J., Fujito, Kenji, DenBaars, Steven P., Speck, James S., Nakamura, Shuji

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Light-polarization characteristics of electroluminescence from In Ga N ∕ Ga N light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN von Masui, Hisashi, Baker, Troy J., Iza, Michael, Zhong, Hong, Nakamura, Shuji, DenBaars, Steven P.

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Spontaneous formation of \lbrace 1\,\bar{1}\,0\,1\rbrace InGaN quantum wells on a (1\,1\,\bar{2} \,2) GaN template and their electroluminescence characteristics von Masui, Hisashi, Kamber, Derrick S, Brinkley, Stuart E, Wu, Feng, Baker, Troy J, Zhong, Hong, Iza, Michael, Speck, James S, Nakamura, Shuji, DenBaars, Steven P

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Photoelectrochemical Properties of Nonpolar and Semipolar GaN von Fujii, Katsushi, Iwaki, Yasuhiro, Masui, Hisashi, Baker, Troy J., Iza, Michael, Sato, Hitoshi, Kaeding, John, Yao, Takafumi, Speck, James S., DenBaars, Steven P., Nakamura, Shuji, Ohkawa, Kazuhiro

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Stabilize gallium source reactor von TROY J. BAKER, WANG YINGHUI

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Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices von Speck, James S, Baker, Troy J, DenBaars, Steven P, Mishra, Umesh K, Chakraborty, Arpan, Pattison, P. Morgan, Haskell, Benjamin A, Farrell, Jr., Robert M, Sharma, Rajat, Nakamura, Shuji

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Sealing flange with cooling circuit von TROY J. BAKER, WANG YINGHUI

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Stable gallium-source reactor von TROY J. BAKER, WANG YINGHUI

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Sealing flange with cooling loop von TROY J. BAKER, WANG YINGHUI

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Self-supporting gallium nitride layer, preparation method therefor, and annealing method von TROY J. BAKER, WANG YINGHUI, LUO XIAOJU

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Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices von Haskell Benjamin A, Farrell, Jr. Robert M, Chakraborty Arpan, Pattison P. Morgan, Baker Troy J, Mishra Umesh K, Speck James S, Sharma Rajat, DenBaars Steven P, Nakamura Shuji

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Cold -trap device, vent gas treatment system in and semiconductor production equipment von TROY J. BAKER, WU ZECHENG, WANG YINGHUI

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