Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET von Dai, Tian Xiang, Shah, Vishal A., Gammon, Peter Michael, Baker, G.W.C., Zhang, Lu Yang, Vavasour, Oliver James, Renz, A. Benjamin, Mawby, Philip Andrew

Volltext

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition von Murphy, J.D., Li, Fan, Shah, Vishal A., Grant, Nicholas E., Esfahani, Siavash, Baker, G.W.C., Vavasour, Oliver James, Renz, A. Benjamin, Dai, Tian Xiang, Gammon, Peter Michael, Mawby, Philip Andrew

Volltext

High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition von Cao, Qinze, Vavasour, Oliver James, Renz, Arne Benjamin, Baker, G.W.C., Shah, Vishal Ajit, Mawby, Philip Andrew, Gammon, Peter Michael, Gott, James A., Dai, Tian Xiang

Volltext

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal von Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A.

Volltext

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium von Rommel, Mathias, Gammon, Peter Michael, Baker, G.W.C., Antoniou, Marina, Shah, Vishal Ajit, Li, Fan, Mawby, Philip Andrew, Vavasour, Oliver James, Dai, Tian Xiang, Renz, A. Benjamin

Volltext

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment von Cao, Qinze, Pathirana, Vasantha, Gammon, Peter Michael, Baker, G.W.C., Trajkovic, Tanya, Pérez-Tomás, Amador, Shah, Vishal Ajit, Bonyadi, Yeganeh, Mawby, Philip Andrew, Vavasour, Oliver James, Renz, A. Benjamin

Volltext

The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2 von Gammon, Peter Michael, Baker, G.W.C., Murphy, John D., Shah, Vishal Ajit, Li, Fan, Mawby, Philip Andrew, Grant, Nicholas, Vavasour, Oliver James, Dai, Tian Xiang, Renz, A. Benjamin

Volltext

A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation von Li, Fan, Shah, Vishal Ajit, Gammon, Peter Michael, Renz, A. Benjamin, Antoniou, Marina, Dai, Tian Xiang, Zhang, Lu Yang, Mawby, Philip Andrew, Baker, G.W.C., Qi, Yun Yi

Volltext

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars von Baker, G.W.C., Shah, Vishal Ajit, Li, Fan, Gammon, Peter Michael, Chan, Chun W., Dai, Tian Xiang, Renz, A. Benjamin, Mawby, Philip Andrew

Volltext

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis von Bonyadi, Yeganeh, Baker, G.W.C., Shah, Vishal Ajit, Li, Fan, Gammon, Peter Michael, Vavasour, Oliver James, Dai, Tian Xiang, Walker, Marc, Renz, A. Benjamin, Mawby, Philip Andrew

Volltext

An investigation into the impact of surface passivation techniques using metal-semiconductor interfaces von Bonyadi, Y., Gammon, P. M., Sharma, Y. K., Baker, G., Mawby, P. A.

Volltext