Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices von Douara, Abdelmalek, Rabehi, Abdelaziz, Baitiche, Oussama

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Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters von Douara, Abdelmalek, Rabehi, Abdelaziz, Baitiche, Oussama, Handami, M.

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Improved electrical characteristics of Alx Ga1-xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters von Douara, A., Rabehi, A., Baitiche, O., Hamdani, M.

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Theoretical and conceptual density functional theory (DFT) study on selectivity of 4-hydroxyquinazoline electrophilic aromatic nitration von Makhloufi, A., Belhadad, O., Ghemit, R., Baitiche, M., Merbah, M., Benachour, DJ

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