Sn Corrosion and Its Influence on Whisker Growth von Osenbach, J.W., DeLucca, J.M., Potteiger, B.D., Amin, A., Shook, R.L., Baiocchi, F.A.

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Sn-whiskers: truths and myths von Osenbach, J W, DeLucca, J M, Potteiger, B D, Amin, A, Baiocchi, F A

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Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing von CHAND, N, PEOPLE, R, BAIOCCHI, F. A, WECHT, K. W, CHO, A. Y

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Electrical and structural changes in the near surface of reactively ion etched InP von PEARTON, S. J, CHAKRABARTI, U. K, BAIOCCHI, F. A

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Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etching von HAYES, T. R, CHAKRABARTI, U. K, BAIOCCHI, F. A, EMERSON, A. B, LUFTMAN, H. S, DAUTREMONT-SMITH, W. C

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Sources of thermal resistance in chemically vapor deposited diamond von Graebner, J.E., Mucha, J.A., Baiocchi, F.A.

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Influence of Polymer Structure on the Miscibility of Photoacid Generators von Uhrich, K. E, Reichmanis, E, Baiocchi, F. A

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Tantalum nitride films as resistors on chemical vapor deposited diamond substrates von KATZ, A, PEARTON, S. J, NAKAHARA, S, BAIOCCHI, F. A, LANE, E, KOVALCHICK, J

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Effect of bismuth doping on thermal expansion and misfit dislocations in epitaxial iron garnets von Fratello, V.J., Licht, S.J., Brandle, C.D., O'Bryan, H.M., Baiocchi, F.A.

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Thermal Stability Limits of Thin TiSi2 : Effect on Submicron Line Resistance and Shallow Junction Leakage von Georgiou, G. E., Abiko, H., Baiocchi, F. A., Ha, N. T., Nakahara, S.

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Laser-assisted metalorganic molecular beam epitaxy of GaAs von DONNELLY, V. M, TU, C. W, BEGGY, J. C, MCCRARY, V. R, LAMONT, M. G, HARRIS, T. D, BAIOCCHI, F. A, FARROW, R. C

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Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts von Katz, A., Wang, K.W., Baiocchi, F.A., Dautremont-Smith, W.C., Lane, E., Luftman, H.S., Varma, R.R., Curnan, H.

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Effect of post-exposure delay in positive acting chemically amplified resists: An analytical study von Nalamasu, O., Reichmanis, E., Hanson, J. E., Kanga, R. S., Heimbrook, L. A., Emerson, A. B., Baiocchi, F. A., Vaidya, S.

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Decomposition of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane on, and diffusion of Cu into single crystal and polycrystalline titanium nitride von Guinn, K.V., Donnelly, V.M., Gross, M.E., Baiocchi, F.A., Petrov, I., Greene, J.E.

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Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy von Abernathy, C.R., Pearton, S.J., Baiocchi, F.A., Ambrose, T., Jordan, A.S., Bohling, D.A., Muhr, G.T.

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Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality von GARVERICK, L. M, COMFORT, J. H, YEW, T. R, REIF, R, BAIOCCHI, F. A, LUFTMAN, H. S

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Material properties of plasma-enhanced chemical vapor deposition fluorinated silicon nitride von PAI, C. S, CHANG, C.-P, BAIOCCHI, F. A, SWIDERSKI, J

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Kinetics of arsenic activation and clustering in high dose implanted silicon von KAMGAR, A, BAIOCCHI, F. A, SHENG, T. T

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Tantalum nitride as a diffusion barrier between Pd2Si or CoSi2 and aluminum von FAROOQ, M. A, MURARKA, S. P, CHANG, C. C, BAIOCCHI, F. A

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Self-aligned TiN barrier formation by rapid thermal nitridation of TiSi2 in ammonia von AVID KAMGAR, BAIOCCHI, F. A, EMERSON, A. B, SHENG, T. T, VASILE, M. J, HAYNES, R. W

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