Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications von Bai, W.P., Bae, S.H., Wen, H.C., Mathew, S., Bera, L.K., Balasubramanian, N., Yamada, N., Li, M.F., Kwong, D.-L.

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Si interlayer passivation on germanium MOS capacitors with high-[kappa] dielectric and metal gate von Bai, W.P, Lu, N, Kwong, D.-L

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Si interlayer passivation on germanium MOS capacitors with high-/spl kappa/ dielectric and metal gate von Bai, W.P., Lu, N., Kwong, D.-L.

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Ge n-MOSFETs on lightly doped substrates with high-[kappa] dielectric and TaN gate von Bai, W.P, Lu, N, Ritenour, A, Lee, M.L, Antoniadis, D.A, Kwong, D.-L

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Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate von Bai, W.P., Lu, N., Ritenour, A., Lee, M.L., Antoniadis, D.A., Kwong, D.-L.

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P.1.232 Menopausal depression: Comparing HRT and HRT plus fluoxetine von Liu, P., Yu, Q., Bai, W.P., He, F.F., Shi, W., Wu, Y.Y., He, D.J., Xiao, J.H., Zheng, Y., Liao, Q.P.

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Scaling of vortex transport properties and nonlinear ac response of high-temperature superconductors von WANG, Y, CHEN, H. D, YIN, D. L, CHEN, K. X, LU, G, BAI, W. P, LI, C. Y

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Amplitude dependence of AC response in high Tc superconductors von Chen, K.X., Lu, G., Xue, L.X., Bai, W.P., Dai, Y.D., Wei, C.D., Wu, K., Feng, Q.R., Ren, H.T., Xiao, L., Yin, D.L.

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Molybdenum gate HfO/sub 2/ CMOS FinFET technology von Daewon Ha, Takeuchi, H., Choi, Y.-K., King, T.-J., Bai, W.P., Kwong, D.L., Agarwal, A., Ameen, M.

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Ge MOS characteristics with CVD HfO/sub 2/ gate dielectrics and TaN gate electrode von Bai, W.P., Lu, N., Liu, J., Ramirez, A., Kwong, D.L., Wristers, D., Ritenour, A., Lee, L., Antoniadis, D.

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Performance and reliability of ultra thin CVD HfO/sub 2/ gate dielectrics with dual poly-Si gate electrodes von Lee, S.J., Luan, H.F., Lee, C.H., Jeon, T.S., Bai, W.P., Senzaki, Y., Roberts, D., Kwong, D.L.

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MOS devices with high quality ultra thin CVD ZrO/sub 2/ gate dielectrics and self-aligned TaN and TaN/poly-Si gate electrodes von Lee, C.H., Kim, Y.H., Luan, H.F., Lee, S.J., Jeon, T.S., Bai, W.P., Kwong, D.L.

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Self-aligned ultra thin HfO/sub 2/ CMOS transistors with high quality CVD TaN gate electrode von Lee, C.H., Lee, J.J., Bai, W.P., Bae, S.H., Sim, J.H., Lei, X., Clark, R.D., Harada, Y., Niwa, M., Kwong, D.L.

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High quality ultra thin CVD HfO/sub 2/ gate stack with poly-Si gate electrode von Lee, S.J., Luan, H.F., Bai, W.P., Lee, C.H., Jeon, T.S., Senzaki, Y., Roberts, D., Kwong, D.L.

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MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/ and Zr silicate gate dielectrics von Lee, C.H., Luan, H.F., Bai, W.P., Lee, S.J., Jeon, T.S., Senzaki, Y., Roberts, D., Kwong, D.L.

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High quality CVD TaN gate electrode for sub-100 nm MOS devices von Kim, Y.H., Lee, C.H., Jeon, T.S., Bai, W.P., Choi, C.H., Lee, S.J., Xinjian, L., Clarks, R., Roberts, D., Kwong, D.L.

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Dual-poly CVD HfO2 gate stack for sub-100 nm CMOS technology von Lee, S.J., Lee, C.H., Kim, Y.H., Luan, H.F., Bai, W.P., Jeon, T.S., Kwong, D.L.

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High-k gate dielectrics for sub-100 nm CMOS technology von Lee, S.J., Lee, C.H., Kim, Y.H., Luan, H.F., Bai, W.P., Jeon, T.S., Kwong, D.L.

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Effectiveness of systemic treatments for pyoderma gangrenosum: a systematic review of observational studies and clinical trials von Partridge, A.C.R., Bai, J.W., Rosen, C.F., Walsh, S.R., Gulliver, W.P., Fleming, P.

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The prevalence of anxiety in patients with psoriasis: a systematic review of observational studies and clinical trials von Fleming, P., Bai, J.W., Pratt, M., Sibbald, C., Lynde, C., Gulliver, W.P.

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