Combined Effect of Low-Intensity Helium-Neon Laser and X-Ray Radiation on in Vivo Cellular Response of the Whole Blood and Lymphoid Organs in Mice von Zaichkina, S. I., Dyukina, A. R., Rozanova, O. M., Romanchenko, S. P., Sirota, N. P., Kuznetsova, E. A., Simonova, N. B., Sorokina, S. S., Zakrzhevskaya, D. T., Yusupov, V. I., Bagratishvili, V. N.

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GaAs/Ge3N4/Al structures and mis field-effect transistors based on them von Bagratishvili, G.D., Dzhanelidze, R.B., Kurdiani, N.I., Pashintsev, Yu.I., Saksaganski, O.V., Skorikov, V.A.

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Mechanism of charge flow through the MGe3N4GaAs structure von Bagratishvili, G. D., Dzhanelidze, R. B., Jishiashvili, D. A., Piskanovskii, L. V., Zyuganov, A. N., Mikhelashvili, V. N., Smertenko, P. S.

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Boron diffusion from a reactively sputtered glass source in Si and SiO2 von Bagratishvili, G. D., Dzhanelidze, R. B., Jishiashvili, D. A., Piskanovskii, L. V., Shiolashvili, Z. N.

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MIS structure GaAs-Ge3N4-Al von Bagratishvili, G. D., Dzhanelidze, R. B., Kurdiani, N. I., Saksaganskii, O. V.

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Mechanism of charge flow through the MGe3N4GaAs structure von Bagratishvili, G. D., Dzhanelidze, R. B., Jishiashvili, D. A., Piskanovskii, L. V., Zyuganov, A. N., Mikhelashvili, V. N., Smertenko, P. S.

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