Depth Dependence of Neutron-Induced Errors in 3-D NAND Floating Gate Cells von Gerardin, S., Bagatin, M., Paccagnella, A., Beltrami, S., Benvenuti, A., Cazzaniga, C.

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Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories von Bagatin, M., Gerardin, S., Paccagnella, A., Beltrami, S., Camerlenghi, E., Bertuccio, M., Costantino, A., Zadeh, A., Ferlet-Cavrois, V., Santin, G., Daly, E.

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Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses von Bonaldo, S., Martinella, C., Race, S., Für, N., Mattiazzo, S., Bagatin, M., Gerardin, S., Paccagnella, A., Grossner, U.

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Secondary Particles Generated by Protons in 3-D nand Flash Memories von Bagatin, M., Gerardin, S., Paccagnella, A., Costantino, A., Ferlet-Cavrois, V., Santin, G., Muschitiello, M., Pesce, A., Beltrami, S.

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Atmospheric Neutron Soft Errors in 3-D NAND Flash Memories von Bagatin, M., Gerardin, S., Paccagnella, A., Beltrami, S., Cazzaniga, C., Frost, C. D.

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A Heavy-Ion Beam Monitor Based on 3-D NAND Flash Memories von Gerardin, S., Bagatin, M., Paccagnella, A., Beltrami, S., Costantino, A., Santin, G., Pesce, A., Ferlet-Cavrois, V., Voss, K.

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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors von Stockman, A., Tajalli, A., Meneghini, M., Uren, M. J., Mouhoubi, S., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E., Moens, P., Bakeroot, B.

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Energy Deposition by Ultrahigh Energy Ions in Large and Small Sensitive Volumes von Bagatin, M., Gerardin, S., Paccagnella, A., Santin, G., Costantino, A., Ferlet-Cavrois, V., Muschitiello, M., Beltrami, S., Voss, K. O., Trautmann, C.

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Characterizing High-Energy Ion Beams With PIPS Detectors von Bagatin, M., Ferlet-Cavrois, V., Gerardin, S., Muschitiello, M., Paccagnella, A., Costantino, A., Santin, G., Boatella Polo, C., Alia, R. Garcia, Fernandez Martinez, P., Kastriotou, M.

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Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs von Gerardin, S., Bagatin, M., Cornale, D., Ding, L., Mattiazzo, S., Paccagnella, A., Faccio, F., Michelis, S.

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Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells von Alayan, M., Bagatin, M., Gerardin, S., Paccagnella, A., Larcher, L., Vianello, E., Nowak, E., De Salvo, B., Perniola, L.

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Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation von De Santi, C., Meneghini, M., Trivellin, N., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E.

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Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells von Bagatin, M, Gerardin, S, Paccagnella, A, Visconti, A

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Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose von Gerardin, S., Bagatin, M., Bertoldo, A., Paccagnella, A., Ferlet-Cavrois, V.

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Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions von Bagatin, M., Gerardin, S., Paccagnella, A.

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Possible effects on avionics induced by terrestrial gamma-ray flashes von Tavani, M, Argan, A, Paccagnella, A, Pesoli, A, Palma, F, Gerardin, S, Bagatin, M, Trois, A, Picozza, P, Benvenuti, P, Flamini, E, Marisaldi, M, Pittori, C, Giommi, P

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Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad von Mattiazzo, S., Bagatin, M., Bisello, D., Gerardin, S., Marchioro, A., Paccagnella, A., Pantano, D., Pezzotta, A., Zhang, C-M., Baschirotto, A.

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TID Sensitivity of NAND Flash Memory Building Blocks von Bagatin, M., Cellere, G., Gerardin, S., Paccagnella, A., Visconti, A., Beltrami, S.

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Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories von Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S.

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Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories von Gerardin, S., Bagatin, M., Paccagnella, A., Ferlet-Cavrois, V., Visconti, A., Frost, C. D.

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