Implementation of energy barrier layers for 1550 nm high-power laser diodes von Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.

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High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures von Slipchenko, S.O., Romanovich, D.N., Gavrina, P.S., Veselov, D.A., Bagaev, T.A., Ladugin, M.A., Marmalyuk, A.A., Pikhtin, N.A.

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Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures von Bobretsova, Yu K, Veselov, D A, Podoskin, A A, Voronkova, N V, Slipchenko, S O, Ladugin, M A, Bagaev, T A, Marmalyuk, A A, Pikhtin, N A

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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics von Volkov, N.A., Bagaev, T.A., Sabitov, D.R., Andreev, A.Yu, Yarotskaya, I.V., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Rudova, N.A., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.

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High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm von Bagaev, T.A., Gul’tikov, N.V., Ladugin, M.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Krichevskii, V.V., Morozyuk, A.A., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A., Kazakova, A.E., Romanovich, D.N., Kryuchkov, V.A.

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Superluminescent diodes of the 770 - 790-nm range based on semiconductor nanostructures with narrow quantum wells von Anikeev, A.S., Bagaev, T.A., Il'chenko, S.N., Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Pankratov, K.M., Shidlovskii, V.R., Yakubovich, S.D.

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Triple integrated laser - thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure von Andreev, A.Yu, Bagaev, T.A., Butaev, M.R., Gamov, N.A., Zhdanova, E.V., Zverev, M.M., Kozlovsky, V.I., Skasyrsky, Ya.K., Yarotskaya, I.V.

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Double integrated laser-thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Zverkov, M.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures von Ladugin, M.A., Bagaev, T.A., Marmalyuk, A.A., Koval', Yu.P., Konyaev, V.P., Sapozhnikov, S.M., Lobintsov, A.V., Simakov, V.A.

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Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy von Ladugin, M. A., Andreev, A. Yu, Yarotskaya, I. V., Ryaboshtan, Yu. L., Bagaev, T. A., Padalitsa, A. A., Marmalyuk, A. A., Vasil’ev, M. G.

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Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70 von Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Bagaev, T.A., Andreev, A.Yu, Telegin, K.Yu, Lobintsov, A.V., Davydova, E.I., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Ivanova, E.B., Simakov, V.A.

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A model for calculating the composition of GaAsxP1–x solid solutions under metalorganic vapor phase epitaxy conditions von Maksimov, A. D., Eistrikh-Geller, V. Yu, Marmalyuk, A. A., Ladugin, M. A., Bagaev, T. A., Gorlachuk, P. V., Yarotskaya, I. V.

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Quantum cascade laser based on As heteropair grown by MOCVD von Zasavitskii, I.I., Zubov, A.N., Andreev, A.Yu, Bagaev, T.A., Gorlachuk, P.V., Ladugin, M.A., Padalitsa, A.A., Lobintsov, A.V., Sapozhnikov, S.M., Marmalyuk, A.A.

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Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser von Marmalyuk, A. A., Padalitsa, A. A., Ladugin, M. A., Gorlachuk, P. V., Yarotskaya, I. V., Andreev, A. Yu, Bagaev, T. A., Lobintsov, A. V., Kurnyavko, Yu. V., Sapozhnikov, S. M., Danilov, A. I., Telegin, K. Yu, Simakov, V. A., Zasavitskii, I. I., Zarubin, S. S.

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On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range von Slipchenko, S. O., Podoskin, A. A., Vasil’eva, V. V., Pikhtin, N. A., Rozhkov, A. V., Gorbatyuk, A. V., Zolotarev, V. V., Veselov, D. A., Jabotinskii, A. V., Petukhov, A. A., Tarasov, I. S., Bagaev, T. A., Zverkov, M. V., Konyaev, V. P., Kurniavko, Y. V., Ladugin, M. A., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Simakov, V. A.

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High-power pulsed lasers based on heterostructures with narrow and wide waveguides von Ladugin, M.A., Koval', Yu.P., Marmalyuk, A.A., Petrovskii, V.A., Bagaev, T.A., Andreev, A.Yu, Padalitsa, A.A., Simakov, V.A.

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Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission von Konyaev, V. P., Marmalyuk, A. A., Ladugin, M. A., Bagaev, T. A., Zverkov, M. V., Krichevsky, V. V., Padalitsa, A. A., Sapozhnikov, S. M., Simakov, V. A.

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THz quantum cascade lasers with two-photon emission in the gain module grown by MBE and MOCVD von R.A. Khabibullin, S.S. Pushkarev, R.R. Galiev, D.S. Ponomarev, I.S. Vasil’Evskii, A.N. Vinichenko, A.N. Klochkov, T.A. Bagaev, M.A. Ladugin, A.A. Marmalyuk, K.V. Maremyanin, V.I. Gavrilenko, D.V. Ushakov, A.A. Afonenko

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DEVICE FOR ELECTROCHEMICAL PROCESSING LONG ARTICLES OF MICROMETERS IN THICKNESS von Bagaev V.N, Voronina T.A, Sirotkin S.N

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