Packaged Monolithic Silicon 112-Gb/s Coherent Receiver von Doerr, C R, Buhl, L L, Baeyens, Y, Aroca, R, Chandrasekhar, S, Liu, X, Chen, L, Chen, Y.-K

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A 36-80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS von Chen, A.Y.-K., Baeyens, Y., Young-Kai Chen, Jenshan Lin

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Low-power 100 GHz shunt-peaked regenerative frequency divider using 0.18 μm SiGe BiCMOS von CHEN, A. Y.-K, BAEYENS, Y, CHEN, Y.-K, LIN, J

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21 dB gain 87 GHz low-noise amplifier using 0.18 μm SiGe BiCMOS von CHEN, A. Y.-K, BAEYENS, Y, CHEN, Y.-K, LIN, J

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A 5-b 10-GSample/s a/D converter for 10-gb/s optical receivers von Jaesik Lee, Roux, P., Ut-Va Koc, Link, T., Baeyens, Y., Young-Kai Chen

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SiGe differential transimpedance amplifier with 50-GHz bandwidth von Weiner, J.S., Leven, A., Houtsma, V., Baeyens, Y., Young-Kai Chen, Paschke, P., Yang Yang, Frackoviak, J., Wei-Jer Sung, Tate, A., Reyes, R., Kopf, R.F., Weimann, N.G.

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Monolithically Integrated 40-Wavelength Demultiplexer and Photodetector Array on Silicon von Long Chen, Doerr, C R, Buhl, L, Baeyens, Y, Aroca, R A

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A fully integrated 40-Gb/s clock and data recovery IC with 1:4 DEMUX in SiGe technology von Reinhold, M., Dorschky, C., Rose, E., Pullela, R., Mayer, P., Kunz, F., Baeyens, Y., Link, T., Mattia, J.-P.

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An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth von Weiner, J.S., Lee, J.S., Leven, A., Baeyens, Y., Houtsma, V., Georgiou, G., Yang Yang, Frackoviak, J., Tate, A., Reyes, R., Kopf, R.F., Wei-Jer Sung, Weimann, N.G., Young-Kai Chen

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An 83-GHz High-Gain SiGe BiCMOS Power Amplifier Using Transmission-Line Current-Combining Technique von Chen, Austin Ying-Kuang, Baeyens, Y., Young-Kai Chen, Jenshan Lin

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Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's von Borgarino, M., Menozzi, R., Baeyens, Y., Cova, P., Fantini, F.

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High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s von Baeyens, Y., Weimann, N., Roux, P., Leven, A., Houtsma, V., Kopf, R.F., Yang Yang, Frackoviak, J., Tate, A., Weiner, J.S., Paschke, P., Young-Kai Chen

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InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers von Baeyens, Y., Georgiou, G., Weiner, J.S., Leven, A., Houtsma, V., Paschke, P., Lee, Q., Kopf, R.F., Yang Yang, Chua, L., Chen, C., Liu, C.T., Young-Kai Chen

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A 6-b 12-GSamples/s track-and-hold amplifier in InP DHBT technology von Jaesik Lee, Leven, A., Weiner, J.S., Baeyens, Y., Yang Yang, Wei-Jer Sung, Frackoviak, J., Kopf, R.F., Young-Kai Chen

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Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE von Manfra, M., Weimann, N., Baeyens, Y., Roux, P., Tennant, D.M.

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Multilayer Planar Tunable Filter With Very Wide Tuning Bandwidth von Sun, J. S., Kaneda, N., Baeyens, Y., Itoh, T., Young-Kai Chen

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Introduction to the Special Issue on the 25th Annual IEEE GaAs Integrated Circuits Conference von Baeyens, Y., Martinez, M.J.

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Compact InP-based HBT VCOs with a wide tuning range at W- and D-band von Baeyens, Y., Dorschky, C., Weimann, N., Qinghung Lee, Kopf, R., Georgiou, G., Mattia, J.P., Hamm, R., Young-Kai Chen

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Unified analytical expressions for transimpedance and equivalent input noise current of optical receivers von Leven, A., Reuter, R., Baeyens, Y.

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A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging von Chen, A.Y.-K., Baeyens, Y., Young-Kai Chen, Jenshan Lin

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