Heteroepitaxial growth of Ga2O3 thin films on nickel-nanodot-induced buffer layers for solar-blind ultraviolet photodetector applications von Bae, Si-Young, Kim, Dong-Eun, Kong, Min-Sung, Kim, Seokgi, Hong, Yunhwa, Heo, Kwang, Kim, Sungkyu, Park, Min-Su

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The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation von Park, Jeong-Hwan, Yang, Xu, Lee, Jun-Yeob, Park, Mun-Do, Bae, Si-Young, Pristovsek, Markus, Amano, Hiroshi, Lee, Dong-Seon

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Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy von Yang, Xu, Nitta, Shugo, Nagamatsu, Kentaro, Bae, Si-Young, Lee, Ho-Jun, Liu, Yuhuai, Pristovsek, Markus, Honda, Yoshio, Amano, Hiroshi

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Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique von Jung, Byung Oh, Bae, Si-Young, Kato, Yoshihiro, Imura, Masataka, Lee, Dong-Seon, Honda, Yoshio, Amano, Hiroshi

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Rapid growth of SiC single crystals using CVD-SiC block sources via a sublimation method von Jeong, Seong-Min, Kim, Yong-Hyeon, Sun, Ju-Hyeong, Park, Jae-Hyeon, Shin, Yun-Ji, Bae, Si-Young, Kim, Chang-Min, Lee, Won-Jae

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Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition von Ha, Minh‐Tan, Kim, Kyoung‐Ho, Shin, Yun‐Ji, Jeong, Seong‐Min, Bae, Si‐Young

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Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition von Lee, Jun-Yeob, Min, Jung-Hong, Bae, Si-Young, Park, Mun-Do, Jeong, Woo-Lim, Park, Jeong-Hwan, Kang, Chang-Mo, Lee, Dong-Seon

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Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode von Jung, Byung Oh, Bae, Si-Young, Lee, Seunga, Kim, Sang Yun, Lee, Jeong Yong, Honda, Yoshio, Amano, Hiroshi

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Growth of (100) β-Ga2O3 single crystal by controlling the capillary behaviors in EFG system von Shin, Yun-Ji, Lim, Su-Min, Jeong, Woon-Hyeon, Cho, Seong-Ho, Choi, Mee-Hi, Lee, Won-Jae, Jeong, Seong-Min, Bae, Si-Young

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Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants von Bae, Si‐Young, Lekhal, Kaddour, Lee, Ho‐Jun, Min, Jung‐Wook, Lee, Dong‐Seon, Honda, Yoshio, Amano, Hiroshi

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Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals von Ha, Minh-Tan, Yu, Yeong-Jae, Shin, Yun-Ji, Bae, Si-Young, Lee, Myung-Hyun, Kim, Cheol-Jin, Jeong, Seong-Min

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Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults von Evropeitsev, Evgeniy A., Robin, Yoann, Shubina, Tatiana V., Bae, Si‐Young, Nitta, Shugo, Kirilenko, Demid A., Davydov, Valery Y., Smirnov, Alexandr N., Toropov, Alexey A., Kushimoto, Maki, Ivanov, Sergey V., Amano, Hiroshi

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Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers von Kim, Kyoung-Ho, Shin, Yun-Ji, Jeong, Seong-Min, Lee, Heesoo, Bae, Si-Young

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Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition von Kim, Kyoung-Ho, Ha, Minh-Tan, Lee, Heesoo, Kim, Minho, Nam, Okhyun, Shin, Yun-Ji, Jeong, Seong-Min, Bae, Si-Young

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Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method von Jeong, Woon-Hyeon, Choi, Su-Min, Lim, Su-Min, Shin, Yun-Ji, Bae, Si-Young, Kang, Jin-Ki, Lee, Won-Jae, Kwon, Se-Hun, Jeong, Seong-Min

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Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer von Lee, Ho-Jun, Bae, Si-Young, Lekhal, Kaddour, Mitsunari, Tadashi, Tamura, Akira, Honda, Yoshio, Amano, Hiroshi

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Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation von Minh-Tan Ha, Le Van Lich, Shin, Yun-Ji, Bae, Si-Young, Lee, Myung-Hyun, Jeong, Seong-Min

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III-nitride core–shell nanorod array on quartz substrates von Bae, Si-Young, Min, Jung-Wook, Hwang, Hyeong-Yong, Lekhal, Kaddour, Lee, Ho-Jun, Jho, Young-Dahl, Lee, Dong-Seon, Lee, Yong-Tak, Ikarashi, Nobuyuki, Honda, Yoshio, Amano, Hiroshi

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Size-controlled InGaN/GaN nanorod array fabrication and optical characterization von Bae, Si-Young, Kong, Duk-Jo, Lee, Jun-Yeob, Seo, Dong-Ju, Lee, Dong-Seon

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Effect of V/III ratio on the surface morphology and electrical properties of m–plane (101¯0) GaN homoepitaxial layers von Barry, Ousmane I, Tanaka, Atsushi, Nagamatsu, Kentaro, Bae, Si-Young, Lekhal, Kaddour, Matsushita, Junya, Deki, Manato, Nitta, Shugo, Honda, Yoshio, Amano, Hiroshi

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