High- k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant von Cho, Moonju, Park, Hong Bae, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Jang, Gi Hoon, Jeong, Jaehack

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Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates von Cho, Moonju, Park, Hong Bae, Park, Jaehoo, Hwang, Cheol Seong, Lee, Jong-Cheol, Oh, Se-Jung, Jeong, Jaehack, Hyun, Kwang Soo, Kang, Hee-Sung, Kim, Young-Wuk, Lee, Jong-Ho

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Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant von Park, Hong Bae, Cho, Moonju, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Kim, Jong-Pyo, Lee, Jong-Ho, Lee, Nae-In, Kang, Ho-Kyu, Lee, Jong-Cheol, Oh, Se-Jung

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Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O, or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics von Cho, Moonju, Park, Hong Bae, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Jeong, Jaehack, Kang, Hee Sung, Kim, Young Wook

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Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposi... von Park, Hong Bae, Cho, Moonju, Park, Jaehoo, Hwang, Cheol Seong, Lee, Jong-Cheol, Oh, Se-Jung

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Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate von Cho, Moonju, Park, Jaehoo, Park, Hong Bae, Hwang, Cheol Seong, Jeong, Jaehack, Hyun, Kwang Soo, Kim, Young-Wug, Oh, Chang-Bong, Kang, Hee-Sung

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Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor von Cho, Moonju, Jeong, Doo Seok, Park, Jaehoo, Park, Hong Bae, Lee, Suk Woo, Park, Tae Joo, Hwang, Cheol Seong, Jang, Gi Hoon, Jeong, Jaehack

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Optimized Nitridation of Al[sub 2]O[sub 3] Interlayers for Atomic-Layer-Deposited HfO[sub 2] Gate Dielectric Films von Park, Hong Bae, Cho, Moonju, Park, Jaehoo, Lee, Suk Woo, Hwang, Cheol Seong, Jeong, Jaehack

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OPTIMISED NITRIDATION OF Al2O3 INTERLAYERS FOR ATOMIC-LAYER-DEPOSITED HfO2 GATE DIELECTRIC FILMS von Park, H B, Cho, M, Park, J, Lee, S W, Hwang, C S, Jeong, J

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IMPROVEMENTS IN RELIABILITY AND LEAKAGE CURRENT PROPERTIES OF HfO2 GATE DIELECTRIC FILMS BY IN SITU O3 OXIDATION OF Si SUBSTRATE von Park, H B, Cho, M, Park, J, Lee, S W, Park, T J, Hwang, C S

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Improvement of NBTI and electrical characteristics by ozone pre-treatment and PBTI issues in HfAlO(N) high-k gate dielectrics von Seok Joo Doh, Hyung-Suk Jung, Yun-Seok Kim, Ha-Jin Lim, Jong Pyo Kim, Jung Hyoung Lee, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kan, Kwang-Pyuk Suh, Seong Geon Park, Sang Bom Kang, Gil Heyun Choi, Young-Su Chung, Hion-Suck Baikz, Hdyo-Sik Chang, Mann-Ho Cho, Dae-Won Moon, Hong Bae Park, Moonju Cho, Cheol Seong Hwang

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