Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy von Narayanan, V., Mahajan, S., Bachmann, K.J., Woods, V., Dietz, N.

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Sellmeier parameters for ZnGaP2 and GaP von Madarasz, F. L., Dimmock, J. O., Dietz, N., Bachmann, K. J.

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Semiclassical Calculation of Reaction Rate Constants for Homolytical Dissociation Reactions of Interest in Organometallic Vapor-Phase Epitaxy (OMVPE) von Cardelino, B. H, Moore, C. E, Cardelino, C. A, McCall, S. D, Frazier, D. O, Bachmann, K. J

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Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition von Cardelino, B. H, Moore, C. E, Cardelino, C. A, Frazier, D. O, Bachmann, K. J

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Origins of defects in self assembled GaP islands grown on Si(001) and Si(111) von Narayanan, V., Sukidi, N., Bachmann, K.J., Mahajan, S.

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P-polarized reflectance spectroscopy: A highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions von Dietz, N, Bachmann, KJ

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Initial stages of heteroepitaxy of GaP on selected silicon surfaces von SUKIDI, N, BACHMANN, K. J, NARAYANAN, V, MAHAJAN, S

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Orientation mediated self-assembled gallium phosphide islands grown on silicon von Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., Dietz, N.

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Real-time optical monitoring of epitaxial growth : pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si von DIETZ, N, ROSSOW, U, ASPNES, D, BACHMANN, K. J

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Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance von Bachmann, K.J., Sukidi, N., Höpfner, C., Harris, C., Dietz, N., Tran, H.T., Beeler, S., Ito, K., Banks, H.T.

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Bias-controlled chemical vapor deposition of diamond thin films von LEE, Y. H, RICHARD, P. D, BACHMANN, K. J, GLASS, J. T

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Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition von Kepler, G.M, Höpfner, C, Scroggs, J.S, Bachmann, K.J

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Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions von DIETZ, N, ROSSOW, U, ASPNES, D. E, BACHMANN, K. J

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Molecular layer epitaxy by real-time optical process monitoring von Bachmann, K.J., Höpfner, C., Sukidi, N., Miller, A.E., Harris, C., Aspnes, D.E., Dietz, N.A., Tran, H.T., Beeler, S., Ito, K., Banks, H.T., Rossow, U.

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Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions von Dietz, N., Rossow, U., Aspnes, D.E., Bachmann, K.J.

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Optimal design of a high pressure organometallic chemical vapor deposition reactor von Bachmann, K.J., Banks, H.T., Höpfner, C., kepler, G.M., LeSure, S., McCall, S.D., Scroggs, J.S.

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Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates von Narayanan, V, Sukidi, N, Hu, Chimin, Dietz, N, Bachmann, K.J, Mahajan, S, Shingubara, S

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Vapor deposition of diamond thin films on various substrates von LEE, Y. H, BACHMANN, K. J, GLASS, J. T, LEGRICE, Y. M, NEMANICH, R. J

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Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition von Xing, G. C., Bachmann, K. J., Posthill, J. B., Timmons, M. L.

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The phase relations in the system Cu,In,Se von Bachmann, Klaus J., Goslowsky, Hans, Fiechter, Sebastian

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