Growth of thick films CdTe from the vapor phase von Sorgenfrei, R., Greiffenberg, D., Bachem, K.H., Kirste, L., Zwerger, A., Fiederle, M.

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Self-compensation in Mg doped p-type GaN grown by MOCVD von Obloh, H, Bachem, K.H, Kaufmann, U, Kunzer, M, Maier, M, Ramakrishnan, A, Schlotter, P

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Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition von Peter, M., Herres, N., Fuchs, F., Winkler, K., Bachem, K.-H., Wagner, J.

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Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate von Peter, M., Kiefer, R., Fuchs, F., Herres, N., Winkler, K., Bachem, K.-H., Wagner, J.

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Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering von Behr, D., Wagner, J., Ramakrishnan, A., Obloh, H., Bachem, K.-H.

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Resonant Raman scattering in GaN/(AlGa)N single quantum wells von Behr, D., Niebuhr, R., Wagner, J., Bachem, K.-H., Kaufmann, U.

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Ionized donor bound excitons in GaN von Šantic, B., Merz, C., Kaufmann, U., Niebuhr, R., Obloh, H., Bachem, K.

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A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor von Gobert, Y., Tasker, P.J., Bachem, K.H.

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Growth of Thick Films CdTe From the Vapor Phase von Greiffenberg, D.., Sorgenfrei, R.., Bachem, K.H., Fiederle, M..

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Realization and modeling of a pseudomorphic (GaAs1− x Sb x –In y Ga1− y As)/GaAs bilayer-quantum well von Peter, M., Winkler, K., Maier, M., Herres, N., Wagner, J., Fekete, D., Bachem, K. H., Richards, D.

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X-ray analysis of the texture of heteroepitaxial gallium nitride films von Herres, N, Obloh, H, Bachem, K.H, Helming, K

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Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In0.53Ga0.47As von Wagner, J., Peter, M., Winkler, K., Bachem, K.-H.

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Elastic constants and Poisson ratio in the system AlAs–GaAs von Krieger, M., Sigg, H., Herres, N., Bachem, K., Köhler, K.

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Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O von Niebuhr, R., Bachem, K. H., Kaufmann, U., Maier, M., Merz, C., Santic, B., Schlotter, P., Jürgensen, H.

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Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers von NIEBUHR, R, BACHEM, K, DOMBROWSKI, K, MAIER, M, PLETSCHEN, W, KAUFMANN, U

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Spectroscopic ellipsometry characterization of (InGa)N on GaN von Wagner, J., Ramakrishnan, A., Behr, D., Obloh, H., Kunzer, M., Bachem, K.-H.

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Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire von Rouvière, J.L., Arlery, M., Niebuhr, R., Bachem, K.H., Briot, O.

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Direct growth of CdTe thick films on the Medipix2 pixel detector chip von Sorgenfrei, R., Zwerger, A., Disch, C., Bachem, K. H., Fiederle, M.

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ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage von EISEN, F. H, BACHEM, K, KLAUSMAN, E, KOEHLER, K, HADDAD, R

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Origin of the Q=11 meV bound exciton in GaN von Kaufmann, U, Merz, C, Šantic, B, Niebuhr, R, Obloh, H, Bachem, K.H

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