Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs von Gnudi, A., Reggiani, S., Gnani, E., Baccarani, G.

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Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Band-Structure Effects in Ultrascaled Silicon Nanowires von Gnani, E., Reggiani, S., Gnudi, A., Parruccini, P., Colle, R., Rudan, M., Baccarani, G.

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation von Lenzi, M., Palestri, P., Gnani, E., Reggiani, S., Gnudi, A., Esseni, D., Selmi, L., Baccarani, G.

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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs von Poli, S., Pala, M.G., Poiroux, T., Deleonibus, S., Baccarani, G.

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Effective Mobility in Nanowire FETs Under Quasi-Ballistic Conditions von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell von Fu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G.

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Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses von Reggiani, S.., Gnani, E.., Gnudi, A.., Rudan, M.., Baccarani, G..

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A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects von Baccarani, G., Reggiani, S.

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Quasi-Ballistic Transport in Nanowire Field-Effect Transistors von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD = 0.4 V von MAIORANO, P, GNANI, E, GNUDI, A, REGGIANI, S, BACCARANI, G

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Steep-slope nanowire FET with a superlattice in the source extension von Gnani, E., Reggiani, S., Gnudi, A., Baccarani, G.

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Vertical-Si-Nanowire-Based Nonvolatile Memory Devices With Improved Performance and Reduced Process Complexity von Sun, Y, Yu, H Y, Singh, N, Leong, K C, Gnani, E, Baccarani, G, Lo, G Q, Kwong, D L

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Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis von Reggiani, S., Baccarani, G., Gnani, E., Gnudi, A., Denison, M., Pendharkar, S., Wise, R., Seetharaman, S.

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Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback von Grassi, R., Gnudi, A., Di Lecce, V., Gnani, E., Reggiani, S., Baccarani, G.

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Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices von Poli, S., Reggiani, S., Gnudi, A., Gnani, E., Baccarani, G.

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Theory of the Junctionless Nanowire FET von Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

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Investigation on the electrical properties of superlattice FETs using a non-parabolic band model von Maiorano, P., Gnani, E., Grassi, R., Gnudi, A., Reggiani, S., Baccarani, G.

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Modeling of gate-all-around charge trapping SONOS memory cells von Gnani, E., Reggiani, S., Gnudi, A., Baccarani, G., Fu, J., Singh, N., Lo, G.Q., Kwong, D.L.

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Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs von Marchi, A., Gnani, E., Reggiani, S., Rudan, M., Baccarani, G.

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