Magnetic properties and loss separation in FeSi/MnZnFe2O4 soft magnetic composites von Lauda, M., Füzer, J., Kollár, P., Strečková, M., Bureš, R., Kováč, J., Baťková, M., Baťko, I.

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SmB6: Topological insulator or semiconductor with valence-fluctuation induced hopping transport? von Batko, I., Batkova, M.

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Design of Permalloy–ferrite–polymer soft magnetic composites doped by ferrite nanoparticles and visualization of magnetic domains von Streckova, M, Szabo, J, Batko, I, Batkova, M, Bircakova, Z, Fuzer, J, Kollar, P, Kovalcikova, A, Bures, R, Medvecky, L

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Influence of Lu – Substitution on the frustrated antiferromagnetic system HoB12 von Gabáni, S., Baťko, I., Baťková, M., Flachbart, K., Gažo, E., Reiffers, M., Shitsevalova, N., Siemensmeyer, K., Sluchanko, N.

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Evidence for magnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01 von Batko, I., Batkova, M., Tran, V.H., Keiderling, U., Filipov, V.B.

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Preparation, chemical and mechanical properties of microcomposite materials based on Fe powder and phenol-formaldehyde resin von Strečková, M., Sopčák, T., Medvecký, Ľ., Bureš, R., Fáberová, M., Batko, I., Briančin, J.

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Imaging of Magnetic Domains and Domain Walls in Spherical Fe-Si Powder Using Magnetic Force Microscopy von Strečková, M., Baťková, M., Baťko, I., Hadraba, H., Bureš, R.

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SmB6: A material with anomalous energy distribution function of charge carriers? von Batko, I., Batkova, M.

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SmB^sub 6^: A material with anomalous energy distribution function of charge carriers? von Batko, I, Batkova, M

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AFM-utilizing approach to search for new oxide materials for perspective applications in memristive devices von Batko, I., Batkova, M.

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International experience in the formation and development of the information security institute as an integral component of the modern state von Batko, I., Pavlenko, D.

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Information-psychological attacks as a threat to national security von Deryugin, I., Batko, I.

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Influence of Pressure on the Electrical Transport Properties of Carbon-Doped EuB 6 von Pristáš, G., Gabáni, S., Baťko, I., Baťková, M., Orendáč, M., Gažo, E., Filipov, V., Konovalova, E., Diko, P., Flachbart, K.

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SmB 6 : Topological insulator or semiconductor with valence-fluctuation induced hopping transport? von Batko, I., Batkova, M.

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Evidence for direct and indirect gap in FeSi from electron tunneling spectroscopy von Bat’ková, M., Bat’ko, I., Mihalik, M.

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Gap properties of SmB6 and YbB12 : Electrical resistivity and tunnelling spectroscopy studies von BAT'KOVA, M, BAT'KO', I, KONOVALOVA, E. S, SHITSEVALOVA, N, PADERNO, Y

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Transport properties of Ho1−xLuxB12 solid solutions von Gabáni, S., Bat’ko, I., Bat’ková, M., Flachbart, K., Gaz̆o, E., Pristás̆, G., Takác̆ová, I., Bogach, A. V., Sluchanko, N. E., Shitsevalova, N. Yu

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Effect of pressure on the electric transport properties of carbon-doped EuB6 von BATKOVA, M, BATKO, I, BAUER, E, KHAN, R. T, FILIPOV, V. B, KONOVALOVA, E. S

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Observation of pseudogap in the normal state of superconducting Mo3Sb7 von Tran, V. H., Batkova, M., Batko, I., Pribulová, Z., Bukowski, Z.

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Evidence for direct and indirect gap in FeSi from electron tunneling spectroscopy von Baťková, M, Baťko, I, Mihalik, M

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