Surface effects on the low-energy cathodoluminescence of zinc oxide von Bylander, E. G.

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Reduced photoinduced degradation in chemical vapor deposited hydrogenated amorphous silicon films von CHU, T. L, CHU, S. S, BYLANDER, E. G, ANG, S. T

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Removal of retained melt from LPE mercury cadmium telluride layers von BYLANDER, E. G

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Supercooling studies and LPE growth of Hg1-xCdxTe from Te-rich solutions von WAN, C. F, WEIRAUCH, D. F, KORENSTEIN, R, BYLANDER, E. G, CASTRO, C. A

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Defect identification in semiconductor alloys using deep level composition dependence. II, Application to GaAs1-xPx von BYLANDER, E. G, MYLES, C. W, SHEN, Y.-T

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Kinetics of Silicon Crystal Growth from SiCl[sub 4] Decomposition von Bylander, E. G.

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New radiant heater for zone melting intermediate melting‐point materials von Bylander, E. G., Best, A. B.

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Vapor Deposition of Sodium Chloride Whiskers von Bylander, E. G.

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Role of the Competing Etching Process in Determining the Quality of Pyrolytically Grown Silicon and Germanium Films von Bylander, E. G.

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Dielectric constant and fundamental lattice frequency of lead telluride von Bylander, E.G., Hass, M.

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Automatic Ion Chamber Correction for Temperature and Pressure von Bylander, E. G., Gardner, J. R.

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Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1− x P x von Bylander, E. G., Myles, Charles W., Shen, Yu-Tang

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Formation of tunnel diodes in vapor-deposited silicon microcrystals von Bylander, E.G., Murphy, R.J.

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Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs sub(1-x)P sub(x) von Bylander, E G, Myles, C W, Shen, Y T

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Erratum: Vapor Deposition of Sodium Chloride Whiskers von Bylander, E. G.

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Fundamental Absorption Edge of Tin Telluride von Bylander, E. G., Dixon, J. R., Riedl, H. R., Schoolar, R. B.

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Reproducible preparation of Sn1−xPbxTe epitaxial films with moderate carrier concentrations von Bylander, E.G.

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Identification of defect centers in Hg(1-x)Cd(x)Te using their energy level composition dependence von Myles, C W, Williams, P F, Chapman, R A, Bylander, E G

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Identification of defect centers in Hg1− x Cd x Te using their energy level composition dependence von Myles, Charles W., Williams, P. Frazer, Chapman, R. A., Bylander, E. G.

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Identification of defect centers in Hg2-xCdxTe using their energy level composition dependence von MYLES, C. W, WILLIAMS, P. F, CHAPMAN, R. A, BYLANDER, E. G

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