256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers von Kang, Dongku, Jeong, Woopyo, Kim, Chulbum, Kim, Doo-Hyun, Cho, Yong Sung, Kang, Kyung-Tae, Ryu, Jinho, Kang, Kyung-Min, Lee, SungYeon, Kim, Wandong, Lee, Hanjun, Yu, Jaedoeg, Choi, Nayoung, Jang, Dong-Su, Lee, Cheon An, Min, Young-Sun, Kim, Moo-Sung, Park, An-Soo, Son, Jae-Ick, Kim, In-Mo, Kwak, Pansuk, Jung, Bong-Kil, Lee, Doo-Sub, Kim, Hyunggon, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-Yup, Park, Ki-Tae, Kyung, Kye-Hyun

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A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate von Jeong, Woopyo, Im, Jae-woo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Ihm, Jeong-Don, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kim, Moo-Sung, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Kitae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk

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Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming von Ki-Tae Park, Sangwan Nam, Daehan Kim, Pansuk Kwak, Doosub Lee, Yoon-He Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Min-Su Kim, Hyun-Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Shim, Dong-Kyo, Ahn, Yang-Lo, Ryu, Jinho, Kim, Donghyun, Yun, Kyunghwa, Kwon, Joonsoo, Shin, Seunghoon, Byeon, Dae-Seok, Choi, Kihwan, Han, Jin-Man, Kyung, Kye-Hyun, Choi, Jeong-Hyuk, Kim, Kinam

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A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications von Lee, J., Sung-Soo Lee, Oh-Suk Kwon, Kyeong-Han Lee, Dae-Seok Byeon, In-Young Kim, Kyoung-Hwa Lee, Young-Ho Lim, Byung-Soon Choi, Jong-Sik Lee, Wang-Chul Shin, Jeong-Hyuk Choi, Kang-Deog Suh

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High-performance 1-Gb-NAND flash memory with 0.12-μm technology von Lee, June, Im, Heung-Soo, Byeon, Dae-Seok, Lee, Kyeong-Han, Chae, Dong-Hyuk, Lee, Kyong-Hwa, Won Hwang, Sang, Lee, Sung-Soo, Lim, Young-Ho, Lee, Jae-Duk, Choi, Jung-Dal, Seo, Young-Il, Lee, Jong-Sik, Suh, Kang-Deog

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A new gradual hole injection dual-gate LIGBT von Lee, Byeong-Hoon, Chun, Jung-Hoon, Kim, Seong-Dong, Byeon, Dae-Seok, Lee, Won-Oh, Han, Min-Koo, Choi, Yearn-Ik

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CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base von Byeon, Dae-Seok, Lee, Byeong-Hoon, Kim, Doo-Young, Han, Min-Koo, Choi, Yearn-Ik

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A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory von Kim, Chulbum, Kim, Doo-Hyun, Jeong, Woopyo, Kim, Hyun-Jin, Park, Il Han, Park, Hyun-Wook, Lee, JongHoon, Park, JiYoon, Ahn, Yang-Lo, Lee, Ji Young, Kim, Seung-Bum, Yoon, Hyunjun, Yu, Jae Doeg, Choi, Nayoung, Kim, NaHyun, Jang, Hwajun, Park, JongHoon, Song, Seunghwan, Park, YongHa, Bang, Jinbae, Hong, Sanggi, Choi, Youngdon, Kim, Moo-Sung, Kim, Hyunggon, Kwak, Pansuk, Ihm, Jeong-Don, Byeon, Dae Seok, Lee, Jin-Yub, Park, Ki-Tae, Kyung, Kye-Hyun

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Dual-gate shorted anode SOI lateral insulated gate bipolar transistor suppressing the snap-back von LEE, B.-H, BYEON, D.-S, KIM, D.-Y, LEE, W.-O, HAN, M.-K, CHOI, Y.-I

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A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well von Lee, Byeong-Hoon, Yun, Chong-Man, Byeon, Dae-Seok, Han, Min-Koo, Choi, Yearn-Ik

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A New Lateral Dual-Gate Thyristor with Current Saturation von Lee, You-Sang, Byeon, Dae-Seok, Han, Min-Koo, Choi, Yearn-Ik

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A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage von Na, Daehoon, Lee, Jang-woo, Lee, Seon-Kyoo, Cho, Hwasuk, Lee, Junha, Yang, Manjae, Song, Eunjin, Kavala, Anil, Kim, Tongsung, Jang, Dong-Su, Jo, Youngmin, Shin, Ji-Yeon, Chun, Byung-Kwan, Lee, Tae-sung, Jeong, Byunghoon, Yoon, Chi-Weon, Kang, Dongku, Lee, Seungjae, Ihm, Jungdon, Byeon, Dae Seok, Lee, Jinyub, Song, Jai Hyuk

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A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application von Dae-Seok Byeon, Sung-Soo Lee, Young-Ho Lim, Dongku Kang, Wook-Kee Han, Dong-Hwan Kim, Kang-Deog Suh

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The maximum controllable current of emitter switched thyristors employing the segmented p-base von Byeon, Dae-Seok, Lee, Byeong-Hoon, Han, Min-Koo, Choi, Yearn-Ik

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A lateral trench-MOS bipolar-mode FET on silicon-on-insulator von Kim, Doo-Young, Byeon, Dae-Seok, Han, Min-Koo, Choi, Y I

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SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME von FUTATSUYAMA TAKUYA, BYEON DAE SEOK

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Memory device von FUTATSUYAMA TAKUYA, BYEON DAE SEOK

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MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THEREOF von BYEON DAE SEOK, KWON TAE HONG

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SEMICONDUCTOR DEVICE INCLUDING CRACK DETECTION CIRCUIT von BYEON DAE SEOK, KWON TAE HONG

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MEMORY DEVICE DETECTING DEFECT OF WORDLINE PATH AND OPERATING METHOD THEREOF von BYEON DAE SEOK, KWON TAE HONG

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