X-Ray Induced T1+++-T1+ Exchange in 0.8 N H2SO41 von CHALLENGER, George E., MASTERS, Burton J.

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Radiation-Induced Ce(III)-Ce(IV) Exchange in Aqueous Nitric and Sulfuric Acids1 von Challenger, George E, Masters, Burton J

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PROCEDE DE FORMATION DE REGIONS DE TYPE N PAR IMPLANTATION D'IONS ARSENIC ET GERMANIUM DANS UN SUBSTRAT EN SILICIUM von SIEGFRIED R. MADER, BURTON J. MASTERS ET HANS B. POGGE

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X-Ray Induced T1 +++ -T1 + Exchange in 0.8 N H 2 SO 4 1 von Challenger, George E., Masters, Burton J.

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Radiation-Induced Ce(III)-Ce(IV) Exchange in Aqueous Nitric and Sulfuric Acids 1 von Challenger, George E., Masters, Burton J.

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X-Ray Induced T1+++-T1+ Exchange in 0.8 N H2SO4 1 von Challenger, George E, Masters, Burton J

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FORMING SILICON INTEGRATED CIRCUIT REGION BY THE IMPLANTATION OF ARSENIC AND GERMANIUM von POGGE, HANS B, MADER, SIEGFRIED R, MASTERS, BURTON J

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Silicon integrated circuit region containing implanted arsenic and germanium von MASTERS, BURTON J, MADER, SIEGFRIED R, POGGE, H. BERNHARD

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MINIMIZATION OF MISFIT DISLOCATIONS IN SILICON BY DOUBLE IMPLANTATION OF ARSENIC AND GERMANIUM von MASTERS, BURTON J, MADER, SIEGFRIED R, POGGE, H. BERNHARD

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METHOD OF ION IMPLANTATION THROUGH AN ELECTRICALLY INSULATIVE MATERIAL von KOENIG, WILFRIED G, MAKRIS, JAMES S, MASTERS, BURTON J

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CH594987 von BURTON J. MASTERS, JAMES S. MARKIS, WILFRIED G. KOENIG

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ION BOMBARDMENT METHOD OF PRODUCING INTEGRATED SEMICONDUCTOR CIRCUIT RESISTORS OF TEMPERATURE COEFFICIENT OF RESISTANCE von KU, SAN-MEI, MASTERS, BURTON J

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Method of ion implantation through an electrically insulative material von KOENIG, WILFRIED G, MASTERS, BURTON J, MAKRIS, JAMES S

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ION BOMBARDMENT METHOD OF PRODUCING INTEGRATED SEMICONDUCTOR CIRCUIT RESISTORS OF LOW TEMPERATURE COEFFICIENT OF RESISTANCE von MASTERS, BURTON J, KU, SAN-MEI

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PROCEDE D'IMPLANTATION D'IONS DANS UN SUBSTRAT SEMI-CONDUCTEUR AU TRAVERS D'UN REVETEMENT PROTECTEUR von WILFRIED G. KOENIG, JAMES S. MAKRIS ET BURTON J. MASTERS

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METHOD OF REDUCING CARRIER LIFETIME IN SEMICONDUCTOR STRUCTURES von BURTON J. MASTERS, MADHUKAR L. JOSHI, TSU-HSING YEH, OSVALDO R. VIVA

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METHOD OF REDUCING CARRIER LIFETIME IN SEMICONDUCTOR STRUCTURES von BURTON J. MASTERS, MADHUKAR L. JOSHI, TSU-HSING YEH, OSVALDO R. VIVA

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Interpreting and reporting fracture classification and operation type in hip fracture: implications for research studies and routine national audits von Masters, James, Metcalfe, David, Parsons, Nick R, Achten, Juul, Griffin, Xavier L, Costa, Matt L

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Exploring reaction pathways with transition path and umbrella sampling: Application to methyl maltoside von Dimelow, Richard J., Bryce, Richard A., Masters, Andrew J., Hillier, Ian H., Burton, Neil A.

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Fractures in sub-Saharan Africa: epidemiology, economic impact and ethnography (Fractures-E3): study protocol von Burton, A, Drew, S, Cassim, B, Jarjou, L.M, Gooberman-Hill, R, Noble, S, Mafirakureva, N, Graham, S.M, Grundy, C, Hawley, S, Wilson, H, Manyanga, T, Marenah, K, Trawally, B, Masters, J, Mushayavanhu, P, Ndekwere, M, Paruk, F, Lukhele, M, Costa, M, Ferrand, R.A, Ward, K.A, Gregson, C.L

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