Ultra-Fast SiC Wafer Surface Roughness Mapping von Asakawa, Yuji, Burk, Albert A., Seaman, Jeff, Seki, Hirokazu, Nakano, Yoshihiro

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Bulk Growth of Large Area SiC Crystals von Deyneka, Eugene, Seaman, Jeff, Dudley, Michael, Leonard, R.T., Ambati, Jyothi, Balkas, Elif, Khlebnikov, Yuri, Powell, Adrian R., Kramarenko, Olek, Guo, J.Q., McClure, Andy, O’Loughlin, M., Sumakeris, Joseph J., Sakhalkar, Varad, Paisley, Michael J., Tsevtkov, V., Burk, Albert A., Horton, Chris, Gangwal, Sumit

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices von Burk, Albert, van Brunt, Edward, Sabri, Shadi, Gajewski, Donald A., Lichtenwalner, Daniel J., Hull, Brett, Allen, Scott, Leonard, Robert, Mackenzie, Andrew, Palmour, John W.

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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings von Wang, Gang Yao, Scozzie, Charles, Pala, Vipindas, Sung, Woong Je, Agarwal, Anant K., Burk, Albert A., Grider, David E., Allen, Scott T., Palmour, John W., Huang, Alex Q., O'Loughlin, Michael J., Cheng, Lin, Brunt, Edward V.

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor von Ryu, S., Lichtenwalner, D., Van Brunt, E., Capell, C., O'Loughlin, M., Jonas, C., Lemma, Y., Zhang, J., Richmond, J., Burk, A., Hull, B., O'Brien, H., Ogunniyi, A., Lelis, A., Casady, J., Grider, D., Allen, S., Palmour, J.

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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices von O'Loughlin, Michael, Tsvetkov, Denis, Ustin, Scott, Burk, Albert, Palmour, John W.

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Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal von Zhang, Q. Jon, Hull, Brett A., Young, Jonathan, Burk, Albert A., Stahlbush, Robert E., Mahadik, Nadeemullah A.

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Exploration of bulk and epitaxy defects in 4H-SiC using large scale optical characterization von Leonard, R. T., Paisley, M. J., Bubel, S., Sumakeris, J. J., Powell, A. R., Khlebnikov, Y., Seaman, J. C., Ambati, J., Burk, A. A., O'Loughlin, M. J., Balkas, E.

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Development of 15 kV 4H-SiC IGBTs von Jonas, Charlotte, Burk, Albert A., Capell, Craig, Clayton, Jack, Agarwal, Anant K., Dhar, Sarit, Ryu, Sei Hyung, Donofrio, Matt, Palmour, John W., O'Loughlin, Michael J., Cheng, Lin

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Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers von Burk, Albert A., O'Loughlin, Michael J., Mahadik, Nadeemullah A., Stahlbush, Robert E., Caldwell, Joshua D.

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15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors von Burk, Albert A., Ogunniyi, Aderinto, Scozzie, Charles, Capell, Craig, O’Brien, Heather, Agarwal, Anant K., Zhang, Jon, Lam, Khiem, Palmour, John W., Richmond, Jim, Cheng, Lin, O'Loughlin, Michael J.

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Development of Multiwafer Warm-Wall Planetary VPE Reactors for SiC Device Production von Burk, A. A.

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20 kV 4H-SiC N-IGBTs von Grider, Dave, Clayton, Jack, Kadavelugu, Arun, Burk, Albert A., Capell, Craig, van Brunt, Edward, Richmond, Jim, Allen, Scott T., Jonas, Charlotte, Agarwal, Anant, Lam, Khiem, Palmour, John W., Ryu, Sei Hyung, O'Loughlin, Michael J., Bhattacharya, Subhashish

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A new species of Cleridae (Col.) from Central Mexico von Wolcott, Albert Burk, 1869

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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC von Burk, Albert A., Scozzie, Charles, Zhang, Qing Chun Jon, Agarwal, Anant K., Palmour, John W., O'Loughlin, Michael J., Callanan, Robert

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SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor von Burk, Albert A., Barnhardt, Dan, Khlebnikov, Yuri, Palmour, John W., O'Loughlin, Michael J., Seaman, Jeff, Deyneka, Eugene, Garrett, Lara, Tsvetkov, Denis, Towner, Paul

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15 kV IGBTs in 4H-SiC von Jonas, Charlotte, Clayton, Jack, Ryu, Sei Hyung, Palmour, John W., Hefner, Allen, Agarwal, Anant, Burk, Albert A., Capell, Craig, Lam, Khiem, Richmond, Jim, Grider, David, Cheng, Lin, O'Loughlin, Michael J.

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Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes von Burk, Albert A., Scozzie, Charles, Zhang, Qing Chun Jon, Agarwal, Anant K., Stahlbush, Robert E., Palmour, John W., O'Loughlin, Michael J.

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9 kV, 1 cm2 SiC Gate Turn-Off Thyristors von Burk, Albert A., Scozzie, Charles, Zhang, Qing Chun Jon, Temple, Victor, Capell, Craig, Agarwal, Anant K., Stahlbush, Robert E., Palmour, John W., O'Loughlin, Michael J., O'Brian, Heather, Callanan, Robert, Caldwell, Joshua D.

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Catalogue of North American beetles of the family Cleridae von Wolcott, Albert Burk, 1869

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