Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films von Rocchino, Lorenzo, Molinari, Alan, Kladaric, Igor, Balduini, Federico, Schmid, Heinz, Sousa, Marilyne, Bruley, John, Bui, Holt, Gotsmann, Bernd, Zota, Cezar B.

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Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy von Borg, Mattias, Gignac, Lynne, Bruley, John, Malmgren, Andreas, Sant, Saurabh, Convertino, Clarissa, Rossell, Marta D, Sousa, Marilyne, Breslin, Chris, Riel, Heike, Moselund, Kirsten E, Schmid, Heinz

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Maximized Benefit of La-Al-O Higher- k Gate Dielectrics by Optimizing the La/Al Atomic Ratio von Arimura, Hiroaki, Brown, Stephen L, Callegari, Alessandro, Kellock, Andrew, Bruley, John, Copel, Matt, Watanabe, Heiji, Narayanan, Vijay, Ando, Takashi

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Oxygen migration in TiO2-based higher-k gate stacks von Kim, SangBum, Brown, Stephen L., Rossnagel, Stephen M., Bruley, John, Copel, Matthew, Hopstaken, Marco J. P., Narayanan, Vijay, Frank, Martin M.

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Gate Capacitance Reduction Due to the Inversion Layer in High- k/Metal Gate Stacks Within a Subnanometer EOT Regime von Iijima, R, Edge, L F, Ariyoshi, K, Bruley, J, Paruchuri, V, Takayanagi, M

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Investigating microwave loss of SiGe using superconducting transmon qubits von Sandberg, Martin, Adiga, Vivekananda P., Brink, Markus, Kurter, Cihan, Murray, Conal, Hopstaken, Marinus, Bruley, John, Orcutt, Jason S., Paik, Hanhee

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment von Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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PULSED LASER DEPOSITION OF DIAMOND-LIKE CARBON-FILMS von PAPPAS, DL, SAENGER, KL, BRULEY, J, KRAKOW, W, CUOMO, JJ, GU, T, COLLINS, RW

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Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy von Choi, Miri, Posadas, Agham, Dargis, Rytis, Shih, Chih-Kang, Demkov, Alexander A., Triyoso, Dina H., David Theodore, N., Dubourdieu, Catherine, Bruley, John, Jordan-Sweet, Jean

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Oxygen Transport in High-k Metal Gate Stacks and Physical Characterization by SIMS Using Isotopic Labeled Oxygen von Hopstaken, Marinus J., Bruley, John, Pfeiffer, Dirk, Copel, Matthew, Frank, Martin M., Cartier, Eduard, Ando, Takashi, Narayanan, Vijay

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Origins of Effective Work Function Roll-Off Behavior for High-κ Last Replacement Metal Gate Stacks von Ando, Takashi, Cartier, Eduard A., Bruley, John, Choi, Kisik, Narayanan, Vijay

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Sputter deposition of dense diamond-like carbon films at low temperature von CUOMO, J. J, DOYLE, J. P, BRULEY, J, LIU, J. C

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment von Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition von Ngo, Thong Q., Posadas, Agham, McDaniel, Martin D., Ferrer, Domingo A., Bruley, John, Breslin, Chris, Demkov, Alexander A., Ekerdt, John G.

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Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates von McDaniel, Martin D., Posadas, Agham, Ngo, Thong Q., Karako, Christine M., Bruley, John, Frank, Martin M., Narayanan, Vijay, Demkov, Alexander A., Ekerdt, John G.

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Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles von Gupta, Tanya, Hannon, James B, Tersoff, J, Tromp, Rudolf M, Ott, John A, Bruley, John, Steingart, Daniel A

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Origins of Effective Work Function Roll-Off Behavior for High-[Formula Omitted] Last Replacement Metal Gate Stacks von Ando, Takashi, Cartier, Eduard A, Bruley, John, Choi, Kisik, Narayanan, Vijay

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Erratum: Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode von Dubourdieu, Catherine, Bruley, John, Arruda, Thomas M., Posadas, Agham, Jordan-Sweet, Jean, Frank, Martin M., Cartier, Eduard, Frank, David J., Kalinin, Sergei V., Demkov, Alexander A., Narayanan, Vijay

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Switching of ferroelectric polarization in epitaxial BaTiO sub(3) films on silicon without a conducting bottom electrode von Dubourdieu, Catherine, Bruley, John, Arruda, Thomas M, Posadas, Agham, Jordan-Sweet, Jean, Frank, Martin M, Cartier, Eduard, Frank, David J, Kalinin, Sergei V, Demkov, Alexander A, Narayanan, Vijay

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Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode von Dubourdieu, Catherine, Bruley, John, Arruda, Thomas M, Posadas, Agham, Jordan-sweet, Jean, Frank, Martin M, Cartier, Eduard, Frank, David J, Kalinin, Sergei V, Demkov, Alexander A, Narayanan, Vijay

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