Extreme dielectric strength in boron doped homoepitaxial diamond von Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Koide, Yasuo, Jomard, François, Planson, Dominique, Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholz, Sigo

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High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer von Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Jomard, François, Planson, D., Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholtz, Sigo

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Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents von Chaussende, Didier, Brosselard, Pierre, Shin, Yun Ji, Doisneau, Beatrice, Dedulle, Jean Marc, Ariyawong, Kanaparin

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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes von Brosselard, Pierre, Camara, Nicolas, Banu, Viorel, Jorda, Xavier, Vellvehi, Miquel, Godignon, Philippe, Millan, JosÉ

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Gate Oxide Degradation of SiC MOSFET in Switching Conditions von Ouaida, Remy, Berthou, Maxime, Leon, Javier, Perpina, Xavier, Oge, Sebastien, Brosselard, Pierre, Joubert, Charles

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Breakdown voltage capability of vertical 4H–SiC power devices von Godignon, Philippe, Biscarrat, Jérôme, Tranchesset, Miya, Lavieville, Romain, Tournier, Dominique, Brosselard, Pierre, Montserrat, Josep

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Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications von Sun, J.W., Juillaguet, Sandrine, Guelfucci, Jude, Camassel, Jean, ul Hassan, Jawad, Henry, Anne, Brosselard, Pierre, Contreras, Sylvie, Peyre, Hervé

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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications von Lazar, Mihai, Tournier, Dominique, Planson, Dominique, Raynaud, Christophe, Morel, Hervé, Brosselard, Pierre

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4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method von Tournier, Dominique, Brosselard, Pierre, Phung, Luong Viet, Sonneville, Camille, Planson, Dominique, Bevilacqua, Pascal, Asllani, Besar

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SiC Schottky Diodes for Harsh Environment Space Applications von Godignon, P, Jorda, X, Vellvehi, M, Perpina, X, Banu, V, Lopez, D, Barbero, J, Brosselard, P, Massetti, S

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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique von Raynaud, Christophe, Tournier, Dominique, ul Hassan, Jawad, Montserrat, Josep, Brosselard, Pierre, Bevilacqua, Pascal, Morel, Hervé, Dheilly, Nicolas, Planson, Dominique

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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes von Thierry-Jebali, N., Hassan, J., Lazar, M., Planson, D., Bano, E., Henry, A., Janzén, E., Brosselard, P.

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Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport von Thierry-Jebali, N., Vo-Ha, A., Carole, D., Lazar, M., Ferro, G., Planson, D., Henry, A., Brosselard, P.

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Cryogenic to High Temperature Exploration of 4H-SiC W-SBD von Brosselard, Pierre, Godignon, Philippe, Berthou, Maxime, Asllani, Besar

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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target von AMMAR, Ali, LAZAR, Mihai, VERGNE, Bertrand

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Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes von Phung, Luong Viet, Planson, Dominique, Asllani, Besar, Fonder, Jean Baptiste, Brosselard, Pierre, Bevilacqua, Pascal

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Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range von Asllani, Besar, Berthou, Maxime, Tournier, Dominique, Brosselard, Pierre, Godignon, Philippe

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An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices von Fonder, Jean Baptiste, Tournier, Dominique, Berthou, Maxime, Vergne, Bertrand, Brosselard, Pierre

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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Thierry-Jebali, N., Brosselard, P., Planson, D., Brylinski, C., Ferro, G.

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Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC von Brosselard, Pierre, Montserrat, Josep, Henry, Anne, Godignon, Philippe, Florentin, Matthieu

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