Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes von Thierry-Jebali, N., Hassan, J., Lazar, M., Planson, D., Bano, E., Henry, A., Janzén, E., Brosselard, P.

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Al-implanted on-axis 4H-SiC MOSFETs von Florentin, M, Cabello, M, Rebollo, J, Montserrat, J, Brosselard, P, Henry, A, Godignon, P

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Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors von Pérez-Tomás, A., Brosselard, P., Godignon, P., Millán, J., Mestres, N., Jennings, M. R., Covington, J. A., Mawby, P. A.

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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Thierry-Jebali, N., Brosselard, P., Planson, D., Brylinski, C., Ferro, G.

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GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling von Pérez-Tomás, A., Placidi, M., Perpiñà, X., Constant, A., Godignon, P., Jordà, X., Brosselard, P., Millán, J.

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Experimental determination of impact ionization coefficients in 4H-SiC von Nguyen, D.M., Raynaud, C., Dheilly, N., Lazar, M., Tournier, D., Brosselard, P., Planson, D.

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Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET von Chevalier, Florian, Tournier, D., Dupuy, L., Planson, D., Grosset, G., Brosselard, P.

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Schottky versus bipolar 3.3 kV SiC diodes von Pérez-Tomás, A, Brosselard, P, Hassan, J, Jordà, X, Godignon, P, Placidi, M, Constant, A, Millán, J, Bergman, J P

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Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress von Banu, V., Brosselard, P., Jordá, X., Montserrat, J., Godignon, P., Millán, J.

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Recent progress in 3.3kV SiC diodes von Brosselard, P., Banu, V., Camara, N., Pérez-Tomás, A.

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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift von Brosselard, P, Pérez-Tomás, A, Hassan, J, Camara, N, Jordà, X, Vellvehí, M, Godignon, P, Millán, J, Bergman, J P

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Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material von Brosselard, Pierre, Millan, José, Banu, Viorel, Godignon, Philippe, Jordá, Xavier

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4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method von Tournier, Dominique, Brosselard, Pierre, Phung, Luong Viet, Sonneville, Camille, Planson, Dominique, Bevilacqua, Pascal, Asllani, Besar

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SiC Schottky Diodes for Harsh Environment Space Applications von Godignon, P, Jorda, X, Vellvehi, M, Perpina, X, Banu, V, Lopez, D, Barbero, J, Brosselard, P, Massetti, S

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A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations von Riedl, Christian, Frewin, Christopher L., Starke, Ulrich, Saddow, Stephen E., Coletti, Camilla

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On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications von Henry, Anne, Bergman, Peder, Brosselard, Pierre, Janzén, Erik, ul Hassan, Jawad, Godignon, Philippe

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Graphene Formation on SiC Substrates von Eddy, Charles R., Campbell, Paul M., VanMil, Brenda L., Tedesco, Joseph L., McCrate, J.M., Jernigan, Glenn G., Kitt, S.A., Gaskill, D. Kurt, Myers-Ward, Rachael L., Culbertson, James C.

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Critical Issues for MOS Based Power Devices in 4H-SiC von Lelis, Aivars J., Geil, Bruce, Scozzie, Charles, Agarwal, Anant K., Haney, Sarah K., Dhar, Sarit, Ryu, Sei Hyung

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4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts von Naretto, Marco, Ferrero, Sergio, Scaltrito, Luciano, Perrone, Denis, Pirri, C. Fabrizio

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Edge termination strategies for a 4 kV 4H-SiC thyristor von BROSSELARD, P, PLANSON, D, SCHARNHOLZ, S, RAYNAUD, C, ZORNGIEBEL, V, LAZAR, M, CHANTE, J.-P, SPAHN, E

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