From Printed Transistors to Printed Smart Systems von Street, R. A., Ng, T. N., Schwartz, D. E., Whiting, G. L., Lu, J. P., Bringans, R. D., Veres, J.

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Silicon surface passivation by hydrogen termination: a comparative study of preparation methods von FENNER, D. B, BIEGELSEN, D. K, BRINGANS, R. D

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Reconstructions of GaAs(111) surfaces observed by scanning tunneling microscopy von BIEGELSEN, D. K, BRINGANS, R. D, NORTHRUP, J. E, SWARTZ, L.-E

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Symmetric arsenic dimers on the Si (100) surface von UHRBERG, R. I. G, BRINGANS, R. D, BACHRACH, R. Z, NORTHRUP, J. E

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Arsenic passivation of Si and Ge surfaces von Bringans, R. D.

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USE OF ZNSE AS AN INTERLAYER FOR GAAS GROWTH ON SI von BRINGANS, RD, BIEGELSEN, DK, SWARTZ, LE, PONCE, FA, TRAMONTANA, JC

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Reflectance difference spectroscopy: Experiment and theory for the model system Si(001):As and application to Si(001) von Kipp, L, Biegelsen, DK, Northrup, JE, Swartz, L, Bringans, RD

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Early stages of growth of GaAs on Si observed by scanning tunneling microscopy von BIEGELSEN, D. K, BRINGANS, R. D, NORTHRUP, J. E, SWARTZ, L. E

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Arsenic-terminated Ge(111): an ideal 1×1 surface von BRINGANS, R. D, UHRBERG, R. I. G, BACHRACH, R. Z, NORTHRUP, J. E

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The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si von Knall, J., Romano, L. T., Biegelsen, D. K., Bringans, R. D., Chui, H. C., Harris, J. S., Treat, D. W., Bour, D. P.

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Formation of the interface between GaAs and Si: implications for GaAs-on-Si heteroepitaxy von BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

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Misfit dislocations in ZnSe grown on vicinal Si(001) substrates von Romano, L. T., Knall, J., Bringans, R. D., Biegelsen, D. K.

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The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si von BRINGANS, R. D, OLMSTEAD, M. A, PONCE, F. A, BIEGELSEN, D. K, KRUSOR, B. S, YINGLING, R. D

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LOW THRESHOLD, 633 NM, SINGLE TENSILE-STRAINED QUANTUM-WELL GA0.6IN0.4P/(ALXGA1-X)0.5IN0.5P LASER von BOUR, DP, TREAT, DW, THORNTON, RL, PAOLI, TL, BRINGANS, RD, KRUSOR, BS, GEELS, RS, WELCH, DF, WANG, TY

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Scanning Tunneling Microscopy Studies of Semiconductor Surface Passivation von Bringans, R. D., Biegelsen, D. K., J. E. Northrup, J. E. Northrup, L.-E. Swartz, L.-E. Swartz

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Photoemission study of the electronic structure of stoichiometric and substoichiometric TiN and ZrN von Höchst, H., Bringans, R. D., Steiner, P., Wolf, Th

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Electronic and atomic structure of GaAs epitaxial overlays on Si (111) von NORTHRUP, J. E, BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A

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Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy von BIEGELSEN, D. K, BRINGANS, R. D, NORTHRUP, J. E, SWARTZ, L.-E

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Comparison between the Electronic Structures of GaAs(111) and GaAs ( 1 ― 1 ― 1 ― ) from Angle-Resolved Photoemission von Bringans, R. D., Bachrach, R. Z.

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LOW THRESHOLD GAXIN1-XP(ALYGA1-Y)0.5IN0.5P STRAINED QUANTUM-WELL LASERS von BOUR, DP, TREAT, DW, THORNTON, RL, PAOLI, TL, BRINGANS, RD, KRUSOR, BS, GEELS, RS, WELCH, DF, WANG, TY

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