MICROELECTRONIC DEVICES INCLUDING OXIDE MATERIAL BETWEEN DECKS THEREOF, AND RELATED MEMORY DEVICES von Bicksler, Andrew, Ng, Wei Yeeng, Brighten, James C

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Microelectronic devices including an oxide material between adjacent decks von Bicksler, Andrew, Ng, Wei Yeeng, Brighten, James C

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MICROELECTRONIC DEVICES INCLUDING AN OXIDE MATERIAL BETWEEN ADJACENT DECKS, AND RELATED METHODS von Bicksler, Andrew, Ng, Wei Yeeng, Brighten, James C

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Microelectronic devices including an oxide material between adjacent decks, electronic systems, and related methods von Bicksler, Andrew, Ng, Wei Yeeng, Brighten, James C

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MICROELECTRONIC DEVICES INCLUDING AN OXIDE MATERIAL BETWEEN ADJACENT DECKS, ELECTRONIC SYSTEMS, AND RELATED METHODS von Bicksler, Andrew, Ng, Wei Yeeng, Brighten, James C

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MICROELECTRONIC DEVICES INCLUDING AN OXIDE MATERIAL BETWEEN ADJACENT DECKS, ELECTRONIC SYSTEMS, AND RELATED METHODS von BRIGHTEN, James C, BICKSLER, Andrew, NG, Wei Yeeng

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인접한 데크 간 산화물 재료를 포함한 마이크로 전자 장치, 전자 시스템 및 관련 방법 von BICKSLER ANDREW, BRIGHTEN JAMES C, NG WEI YEENG

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Dual mask process for semiconductor devices von Liu, Joyce C, Brighten, James C, Brown, Jeffrey J, Golz, John, Kaplita, George A, Mih, Rebecca, Srinivasan, Senthil, Wu, Jin Jwang, Wu, Teresa J, Yu, Chienfan

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Dual mask process for semiconductor devices von KAPLITA GEORGE A, LIU JOYCE C, WU TERESA J, YU CHIENFAN, BRIGHTEN JAMES C, BROWN JEFFREY J, MIH REBECCA, WU JIN JWANG, SRINIVASAN SENTHIL, GOLZ JOHN

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DUAL MASK PROCESS FOR SEMICONDUCTOR DEVICES von KAPLITA GEORGE A, LIU JOYCE C, WU TERESA J, YU CHIENFAN, BRIGHTEN JAMES C, BROWN JEFFREY J, MIH REBECCA, WU JIN JWANG, SRINIVASAN SENTHIL, GOLZ JOHN

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics von Liu, C.H., Lee, M.T., Chih-Yung Lin, Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T.B., Khare, M.V., Shih-Fen Huang, Wann, C., Tze-Chiang Chen, Ning, T.H.

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High performance 50 nm CMOS devices for microprocessor and embedded processor core applications von Shih-Fen Huang, Chih-Yung Lin, Yu-Shyang Huang, Schafbauer, T., Eller, M., Yao-Ching Cheng, Shui-Ming Cheng, Sportouch, S., Wei Jin, Rovedo, N., Grassmann, A., Yimin Huang, Brighten, J., Liu, C.H., von Ehrenwall, B., Chen, N., Jia Chen, Park, O.S., Commons, M., Thomas, A., Ming-Tsan Lee, Rauch, S., Clevenger, L., Kaltalioglu, E., Pak Leung, Jenkon Chen, Schiml, T., Wann, C.

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Integration of high-performance, low-leakage and mixed signal features into a 100nm CMOS technology von SCHAFBAUER, Thomas, BRIGHTEN, James, HUANG, Shih-Fen, YIMIN HUANG, KALTALIOGLU, Erdem, KNOBLINGER, Gerhard, LEE, Ming-Tsan, LESLIE, Alan, LEUNG, Pak, LI, Baozhen, CHUAN LIN, LIN, Yi-Hsiung, CHEN, Yi-Cheng, NISSL, Walter, NGUYEN, Phung, OLBRICH, Alexander, RIESS, Philipp, ROVEDO, Nivo, SPORTOUCH, Sandrine, THOMAS, Al, VIETZKE, Dirk, WENDEL, Martin, WONG, Robert, CLEVENGER, Larry, QIUYI YE, LIN, Kun-Chi, SCHIML, Thomas, WANN, Clement, COMMONS, Martin, COWLEY, Andy, ESMARK, Kai, GRASSMANN, Andreas, HODEL, Uwe, HUANG, Hsiang-Jen

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