Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells von Brammertz, G., Buffière, M., Oueslati, S., ElAnzeery, H., Ben Messaoud, K., Sahayaraj, S., Köble, C., Meuris, M., Poortmans, J.

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Innovative and industrially viable approach to fabricate AlOx rear passivated ultra-thin Cu(In, Ga)Se2 (CIGS) solar cells von Birant, Gizem, de Wild, J., Kohl, T., Buldu, D.G., Brammertz, G., Meuris, M., Poortmans, J., Vermang, B.

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates von Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.

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Crystallization properties of Cu2ZnGeSe4 von Brammertz, G., Kohl, T., De Wild, J., Meuris, M., Vermang, B., Poortmans, J.

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Study of (AgxCu1−x)2ZnSn(S,Se)4 monograins synthesized by molten salt method for solar cell applications von Oueslati, S., Kauk-Kuusik, M., Neubauer, C., Mikli, V., Meissner, D., Brammertz, G., Vermang, B., Krustok, J., Grossberg, M.

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Fabrication of high band gap kesterite solar cell absorber materials for tandem applications von Kohl, Thierry, Brammertz, G., de Wild, J., Neuwirth, M., Meuris, M., Poortmans, J., Vermang, B.

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Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu–Zn–Ge precursor layers von Buffière, M., ElAnzeery, H., Oueslati, S., Ben Messaoud, K., Brammertz, G., Meuris, M., Poortmans, J.

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Correlation between physical, electrical, and optical properties of Cu2ZnSnSe4 based solar cells von Brammertz, G., Buffière, M., Mevel, Y., Ren, Y., Zaghi, A. E., Lenaers, N., Mols, Y., Koeble, C., Vleugels, J., Meuris, M., Poortmans, J.

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On the interface state density at In0.53Ga0.47As/oxide interfaces von Brammertz, G., Lin, H.-C., Caymax, M., Meuris, M., Heyns, M., Passlack, M.

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Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology von Lopes, T. S., Teixeira, J. P., Curado, M. A., Ferreira, B. R., Oliveira, A. J. N., Cunha, J. M. V., Monteiro, M., Violas, A., Barbosa, J. R. S., Sousa, P. C., Çaha, I., Borme, J., Oliveira, K., Ring, J., Chen, W. C., Zhou, Y., Takei, K., Niemi, E., Deepak, F. L., Edoff, M., Brammertz, G., Fernandes, P. A., Vermang, B., Salomé, P. M. P.

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Capacitance-voltage characterization of GaAs–Al2O3 interfaces von Brammertz, G., Lin, H.-C., Martens, K., Mercier, D., Sioncke, S., Delabie, A., Wang, W. E., Caymax, M., Meuris, M., Heyns, M.

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Spectral current-voltage analysis of kesterite solar cells von Buffière, M, Brammertz, G, Oueslati, S, Anzeery, H El, Bekaert, J, Messaoud, K Ben, Köble, C, Khelifi, S, Meuris, M, Poortmans, J

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Physical routes for the synthesis of kesterite von Ratz, T, Brammertz, G, Caballero, R, León, M, Canulescu, S, Schou, J, Gütay, L, Pareek, D, Taskesen, T, Kim, D-H, Kang, J-K, Malerba, C, Redinger, A, Saucedo, E, Shin, B, Tampo, H, Timmo, K, Nguyen, N D, Vermang, B

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Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods von O’Connor, É., Monaghan, S., Long, R. D., O’Mahony, A., Povey, I. M., Cherkaoui, K., Pemble, M. E., Brammertz, G., Heyns, M., Newcomb, S. B., Afanas’ev, V. V., Hurley, P. K.

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Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells von Buffière, M., Brammertz, G., Batuk, M., Verbist, C., Mangin, D., Koble, C., Hadermann, J., Meuris, M., Poortmans, J.

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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane von Vincent, B., Loo, R., Vandervorst, W., Brammertz, G., Caymax, M.

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Selective area growth of high quality InP on Si (001) substrates von Wang, G., Leys, M. R., Loo, R., Richard, O., Bender, H., Waldron, N., Brammertz, G., Dekoster, J., Wang, W., Seefeldt, M., Caymax, M., Heyns, M. M.

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Stability, reliability, upscaling and possible technological applications of kesterite solar cells von Larramona, G, Choné, C, Meissner, D, Ernits, K, Bras, P, Ren, Y, Martín-Salinas, R, Rodríguez-Villatoro, J L, Vermang, B, Brammertz, G

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Capacitance–Voltage Characterization of GaAs–Oxide Interfaces von Brammertz, G., Lin, H. C., Martens, K., Mercier, D., Merckling, C., Penaud, J., Adelmann, C., Sioncke, S., Wang, W. E., Caymax, M., Meuris, M., Heyns, M.

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Physical and electrical characterization of high-performance Cu 2 ZnSnSe 4 based thin film solar cells von Oueslati, S., Brammertz, G., Buffière, M., ElAnzeery, H., Touayar, O., Köble, C., Bekaert, J., Meuris, M., Poortmans, J.

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