Photolithographic properties of tin-oxo clusters using extreme ultraviolet light (13.5nm) von Cardineau, Brian, Del Re, Ryan, Marnell, Miles, Al-Mashat, Hashim, Vockenhuber, Michaela, Ekinci, Yasin, Sarma, Chandra, Freedman, Daniel A., Brainard, Robert L.

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Mechanistic Studies of Positive-Tone Organoantimony Resists von Greenough, Jordan, Uphadyay, Nitinkumar S., Hasan, Shaheen, Ali, Munsaf, Burke, Ricardo, Denbeaux, Greg, Brainard, Robert L.

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Dry Deposition and Dry Development of Metal Oxide Based Photoresist von Kenane, Nizan, Silva, Anuja De, Haider, Ali, Hoang, Linh, Huang, Ching-Chung, Kam, Benjamin, Kim, Ji Yeon, Lee, Younghee, Li, Da, Tan, Samantha, Weidman, Tim, Wu, Cheng Hao, Yu, Jengyi, Zhang, Guoyan, Zhang, Yichi, Brainard, Robert L., Denbeaux, Gregory, Maldonado, Nicolas, Upadhyay, Nitinkumar S., Sherwood, Mark

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What We Don’t Know About EUV Exposure Mechanisms von Narasimhan, Amrit, Wisehart, Liam, Grzeskowiak, Steven, Ocola, Leonidas E., Denbeaux, Greg, Brainard, Robert L.

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Isotopic Labeling Studies of EUV Photoresists Containing Antimony von Murphy, Michael, Sitterly, Jacob, Grzeskowiak, Steven, Denbeaux, Greg, Brainard, Robert L.

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Acid Generation Efficiency of EUV PAGs via Low Energy Electron Exposure von Grzeskowiak, Steven, Narasimhan, Amrit, Rebeyev, Eliran, Joshi, Shresht, Brainard, Robert L., Denbeaux, Greg

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EUV Mechanistic Studies of Antimony Resists von Murphy, Michael, Narasimhan, Amrit, Grzeskowiak, Steven, Sitterly, Jacob, Schuler, Philip, Richards, Jeff, Denbeaux, Greg, Brainard, Robert L.

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Secondary Electrons in EUV Lithography von Torok, Justin, Re, Ryan Del, Herbol, Henry, Das, Sanjana, Bocharova, Irina, Paolucci, Angela, Ocola, Leonidas E., Ventrice, Carl, Jr, Lifshin, Eric, Denbeaux, Greg, Brainard, Robert L.

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Catalytic and Autocatalytic Mechanisms of Acid Amplifiers for Use in EUV Photoresists von Kruger, Seth A, Higgins, Craig, Cardineau, Brian, Younkin, Todd R, Brainard, Robert L

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Positive-Tone Organoantimony Resists von Greenough, Jordan, Uphadyay, Nitinkumar S., Hasan, Shaheen, Ali, Munsaf, Burke, Ricardo, Denbeaux, Greg, Brainard, Robert L.

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Bismuth Resists for EUV Lithography von Passarelli, James, Sortland, Miriam, Re, Ryan Del, Cardineau, Brian, Sarma, Chandra, Freedman, Daniel A., Brainard, Robert L.

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Fluorinated Acid Amplifiers for EUV Lithography von Kruger, Seth, Revuru, Sri, Higgins, Craig, Gibbons, Sarah, Freedman, Daniel A, Yueh, Wang, Younkin, Todd R, Brainard, Robert L

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Chain-Scission Polyethers for EUV Lithography von Cardineau, Brian, Garczynski, Pascal, Earley, William, Brainard, Robert L.

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Understanding the onset of EUV resist chemical stochastics von Denbeaux, Greg, Azhari, Nabihah, Ai, Ruiwen, Kahl, Benjamin, Painter, Micah, Adamson, Zachary, Aldrin, Ashley, Dilina, Eshan, Choudhary, Ankit, Brainard, Robert L.

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Electron Penetration Depths in EUV Photoresists von Torok, Justin, Srivats, Bharath, Memon, Shahid, Herbol, Henry, Schad, Jonathan, Das, Sanjana, Ocola, Leonidas, Denbeaux, Greg, Brainard, Robert L.

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Electronic structure, excitation properties, and chemical transformations of extreme ultra-violet resist materials von Rangan, Sylvie, Bartynski, Robert A., Narasimhan, Amrit, Brainard, Robert L.

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Polymerizable Olefins Groups in Antimony EUV Photoresists von Murphy, Michael, Upadhyay, Nitinkumar S., Ali, Munsaf, Passarelli, James, Grzeskowiak, Jodi, Weires, Maximillian, Brainard, Robert L.

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Resolution, Line-Edge Roughness, Sensitivity Tradeoff, and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet Lithography von Higgins, Craig D, Szmanda, Charles R, Antohe, Alin, Denbeaux, Greg, Georger, Jacque, Brainard, Robert L

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Cross sections of photoacid generators at low electron energies von Grzeskowiak, Steven, Narasimhan, Amrit, Ostrander, Jonathan, Schad, Jonathon, Earley, William, Brainard, Robert L., Denbeaux, Greg, Ocola, Leonidas E., Neisser, Mark

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EUV Photochemistry of α-Substituted Antimony Carboxylate Complexes von Murphy, Michael, Weires, Maximilian, Upadhyay, Nitinkumar S., Schuler, Philip, Hasan, Shaheen, Denbeaux, Greg, Brainard, Robert L.

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