Electrochemical Deposition of Iridium onto Gallium Arsenide from a Sulfamate Electrolyte Based on Hexachloroiridic(IV) Acid von Bekezina, T. P., Vaisbekker, M. S., Burmistrova, V. A., Bozhkov, V. G.

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Control of sub-terahertz gyrotron frequency by modulation-anode voltage: Comparison of theoretical and experimental results von Fokin, A. P., Tsvetkov, A. I., Manuilov, V. N., Sedov, A. S., Bozhkov, V. G., Genneberg, V. A., Movshevich, B. Z., Glyavin, M. Yu

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A Set of Receiving Equipment for Detection of Collective Thomson Scattering Spectra at the Gas-Dynamic Trap (GDT) Facility von Lubyako, L.V., Shalashov, A. G., Andriyanov, A. F., Bozhkov, V. G., Gospodchikov, E. D., Dorozhkina, D. S.

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The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition von Bozhkov, V. G., Shmargunov, A. V., Bekezina, T. P., Torkhov, N. A., Novikov, V. A.

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AFM study of charging of the Au–n-GaAs contact von Shmargunov, A.V., Bozhkov, V.G., Novikov, V.A.

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A calibration system for microwave radiometers based on a modulator–calibrator von Krasilnikov, A. A., Kulikov, M. Yu, Ryskin, V. G., Fedoseev, L. I., Shvetsov, A. A., Bozhkov, V. G., Bol’shakov, O. S.

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Low-frequency noise in metal–semiconductor contacts with local barrier height lowering von Bozhkov, V.G., Vasiliev, O.V.

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Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height von Bozhkov, V. G., Shmargunov, A. V.

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Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters von Bozhkov, V. G., Shmargunov, A. V.

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About the determination of the Schottky barrier height with the C-V method von Bozhkov, V. G., Torkhov, N. A., Shmargunov, A. V.

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Low-frequency noise and current–voltage characteristics of Schottky barrier contacts in a wide temperature range von Bozhkov, V. G., Kuzyakov, D. Ju

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Radiometer of the 3-mm wave range with a modulator-calibrator von Fedoseev, L. I., Bozhkov, V. G., Genneberg, V. A., Petrov, I. V., Shkaev, A. P.

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Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100) von Torkhov, N. A., Bozhkov, V. G.

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Transient Processes in the GaAs-Based Microwave-PIN-Diodes von Ayzenshtat, G. I., Yushchenko, А. Yu, Bozhkov, V. G.

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Application of Schottky diodes as frequency converters in submillimetre and IR systems von Bagayev, S N, Bozhkov, V G, Zakharyash, Valerii F, Klementyev, Vasilii M, Malakhovskii, O Yu, Pivtsov, V S, Chepurov, S V, Khamoyan, A G

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Semiconductor Detectors, Mixers, and Frequency Multipliers for the Terahertz Band von Bozhkov, V. G.

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Development of terahertz mixers and a study of their characteristics von Bozhkov, V. G., Genneberg, V. A., Kuzyakov, D. Yu, Kurkan, K. I., Fedoseev, L. I.

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Designing 1.5-and 2-mm waveband radio spectrometers with optimized performance for atmospheric research von Rozanov, S. B., Sobel’man, I. I., Bozhkov, V. G., Esepkina, N. A., Ignat’ev, A. N., Kropotkina, E. P., Kruglov, S. K., Nikiforov, P. L., Perfil’ev, V. I., Pirogov, Yu. A., Saenko, I. I., Solomonov, S. V., Turygin, S. Yu, Shtanyuk, A. M.

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Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy von Bozhkov, V. G., Torkhov, N. A., Ivonin, I. V., Novikov, V. A.

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Atomic force microscopy study of the potential distribution over a locally metallized n-GaAs surface von Torkhov, N. A., Bozhkov, V. G., Ivonin, I. V., Novikov, V. A.

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