Nitride-based semiconductors for blue and green light-emitting devices von Ponce, F. A., Bour, D. P.

Volltext

Widely tunable mode-hop free external cavity quantum cascade lasers for high resolution spectroscopy and chemical sensing von Wysocki, G., Lewicki, R., Curl, R.F., Tittel, F.K., Diehl, L., Capasso, F., Troccoli, M., Hofler, G., Bour, D., Corzine, S., Maulini, R., Giovannini, M., Faist, J.

Volltext

Multiband GaNAsP quaternary alloys von Yu, K. M., Walukiewicz, W., Ager, J. W., Bour, D., Farshchi, R., Dubon, O. D., Li, S. X., Sharp, I. D., Haller, E. E.

Volltext

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes von King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A. A., Moseley, M. W., Leonard, F., Talin, A. A., Kaplar, R. J.

Volltext

Experimental observation of RF avalanche gain in GaN-based PN junction diodes von Fay, P, Aktas, O, Bour, D, Kizilyalli, I.C

Volltext

Clientélisme politique et recommandations: L’exemple de la Lorraine de la IIIe à la Ve République von Bour, Julie

Volltext

Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off von Wong, W. S., Sands, T., Cheung, N. W., Kneissl, M., Bour, D. P., Mei, P., Romano, L. T., Johnson, N. M.

Volltext

High-temperature continuous wave operation of strain-balanced quantum cascade lasers grown by metal organic vapor-phase epitaxy von Diehl, L., Bour, D., Corzine, S., Zhu, J., Höfler, G., Lončar, M., Troccoli, M., Capasso, Federico

Volltext

Determination of the piezoelectric field in InGaN quantum wells von Brown, I. H., Pope, I. A., Smowton, P. M., Blood, P., Thomson, J. D., Chow, W. W., Bour, D. P., Kneissl, M.

Volltext

Phase separation in InGaN/GaN multiple quantum wells von McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Johnson, N. M., Brennan, S.

Volltext

Spatial distribution of the luminescence in GaN thin films von Ponce, F. A., Bour, D. P., Götz, W., Wright, P. J.

Volltext

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition von Götz, W., Johnson, N. M., Walker, J., Bour, D. P., Street, R. A.

Volltext

Local vibrational modes of the Mg–H acceptor complex in GaN von Götz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D., Haller, E. E.

Volltext

Hydrogen-related, deeply bound excitons in Mg-doped GaN films von Juday, R., Fischer, A. M., Huang, Y., Huang, J. Y., Kim, H. J., Ryou, J.-H., Dupuis, R. D., Bour, D. P., Ponce, F. A.

Volltext

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers von Ponce, F. A., Bour, D. P., Young, W. T., Saunders, M., Steeds, J. W.

Volltext

Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers von Selmic, S.R., Tso-Min Chou, Jiehping Sih, Kirk, J.B., Mantle, A., Butler, J.K., Bour, D., Evans, G.A.

Volltext

Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects von Helman, N.C., Roth, J.E., Bour, D.P., Altug, H., Miller, D.A.B.

Volltext

Deep level defects in Mg-doped, p -type GaN grown by metalorganic chemical vapor deposition von Götz, W., Johnson, N. M., Bour, D. P.

Volltext

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography von McCartney, M. R., Ponce, F. A., Cai, Juan, Bour, D. P.

Volltext

Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies von Schares, L., Kash, J.A., Doany, F.E., Schow, C.L., Schuster, C., Kuchta, D.M., Pepeljugoski, P.K., Trewhella, J.M., Baks, C.W., John, R.A., Shan, L., Kwark, Y.H., Budd, R.A., Chiniwalla, P., Libsch, F.R., Rosner, J., Tsang, C.K., Patel, C.S., Schaub, J.D., Dangel, R., Horst, F., Offrein, B.J., Kucharski, D., Guckenberger, D., Hegde, S., Nyikal, H., Chao-Kun Lin, Tandon, A., Trott, G.R., Nystrom, M., Bour, D.P., Tan, M.R.T., Dolfi, D.W.

Volltext