Strain Evaluation of Laser-Annealed SiGe Thin Layers von Komago, Shota, Murakami, Tatsumi, Yoshioka, Kazutoshi, Yokogawa, Ryo, Borland, John O, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Horiguchi, Naoto, Ogura, Atsushi

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Properties of chemical-vapor-deposited titanium nitride von Price, J.B., Borland, John O., Selbrede, Steve

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Alternative USJ formation and characterization methods for 45nm node technology von Borland, John O.

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High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn) von Borland, John O

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(Invited) Smartphones: Driving Technology to More than Moore 3-D Stacked Devices/Chips and More Moore FinFET 3-D Doping with High Mobility Channel Materials from 20/22nm Production... von Borland, John O

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Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing von Komago, Shota, Yokogawa, Ryo, Yoshioka, Kazutoshi, Borland, John O., Kuroi, Takashi, Kawasaki, Yoji, Ogura, Atsushi

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Residential Island Nano-grid for 100% Renewable Clean Energy von Borland, John O.

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Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii) von Tanjyo, Masayasu, Hamamoto, Nariaki, Nagayama, Tsutomu, Umisedo, Sei, Koga, Yuji, Maehara, Noriaki, Une, Hideyasu, Matsumoto, Takao, Nagai, Nobuo, Borland, John O.

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Dopant Activation and Profile Determination with an Elastic Material Probe (EM-Probe) von Hillard, Robert J, Ye, C Win, Borland, John O

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Non-Contact, Image-Based Photoluminescence Metrology for Ion Implantation and Annealing Process Inspection von Buczkowski, Andrzej, Li, Zhiqiang, Walker, Tom, Hummel, Steven G, Borland, John O

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Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing von Borland, John O, Chaung, Shang-Shuin, Tseng, Tseung-Yuen, Joshi, Abhijeet, Basol, Bulent, Lee, Yao Jen, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Goodman, Gary, Khapochkina, Nadya, Buyuklimanli, Temel

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Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology von Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet

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High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn) von Borland, John O

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(Invited) Smartphones: Driving Technology to More than Moore 3-D Stacked Devices/Chips and More Moore FinFET 3-D Doping with High Mobility Channel Materials from 20/22nm Production... von Borland, John O

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Hillock defects in InGaAs/InP multi-layers grown by MBE von Saito, Hideho, Borland, John O., Asahi, Hajime, Nagai, Haruo, Nawata, Kiyoshi

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Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing von Borland, John O, Joshi, Abhijeet, Basol, Bulent, Lee, Yao Jen, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Goodman, Gary, Khapochkina, Nadya, Buyuklimanli, Temel

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Strain Evaluation of Laser-Annealed SiGe Thin Layers von Komago, Shota, Murakami, Tatsumi, Yoshioka, Kazutoshi, Yokogawa, Ryo, Ogura, Atsushi, Borland, John O, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Horiguchi, Naoto

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32nm Node USJ Implant & Annealing Options von Borland, J.O.

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Implant and annealing process integration issues to reduce device variability for ≪10nm p+ & n+ ultra-shallow junctions von Borland, J.O.

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Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology von Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet

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