Polishing of optoelectronic components made of monocrystalline silicon carbide von Filatov, Yu. D., Vetrov, A. G., Sidorko, V. I., Filatov, O. Yu, Kovalev, S. V., Kurilovich, V. D., Danil’chenko, M. A., Prikhna, T. A., Borimskii, A. I., Katsai, A. M., Poltoratskii, V. G.

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Studies of the oxidation stability, mechanical characteristics of materials based on max phases of the Ti-Al-(C, N) systems, and of the possibility of their use as tool bonds and m... von Prikhna, T. A., Starostina, A. V., Lizkendorf, D., Petrusha, I. A., Ivakhnenko, S. A., Borimskii, A. I., Filatov, Yu. D., Loshak, M. G., Serga, M. A., Tkach, V. N., Turkevich, V. Z., Sverdun, V. B., Klimenko, S. A., Turkevich, D. V., Dub, S. N., Basyuk, T. V., Karpets, M. V., Moshchil, V. E., Kozyrev, A. V., Il’nitskaya, G. D., Kovylyaev, V. V., Cabiosh, T., Chartier, P.

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Numerical modeling of the strength and longevity of structures with allowance for scale effect. Report 3. Investigation of the stress state, strength, and longevity of cylindrical-... von Novikov, N. V., Shestakov, S. I., Levitas, V. I., Borimskii, A. I., Idesman, A. V.

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Numerical modeling of the strength and longevity of structures with allowance for scale effect. III : Investigation of the stress state, strength, and longevity of cylindrical-type... von NOVIKOV, N. V, SHESTAKOV, S. I, LEVITAS, V. I, BORIMSKII, A. I, IDESMAN, A. V

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Size effect in tests of commercial devitrified glasses in uniaxial compression von Pisarenko, G. S., Rodichev, Yu. M., Okhrimenko, G. M., Poleshko, A. P., Borimskii, A. I.

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Installation for testing materials under hydrostatic pressure von Belinskii, V. S., Borimskii, A. I., Gerasimovich, A. V., Lebedev, A. A., Loshak, M. G., Fridman, V. M.

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Numerical simulation of the mechanical state of the two-stage multi-anvil high pressure apparatus von Polotnyak, S. B., Borimskii, O. I.

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Influence of carbon and preannealing on the formation of oxygen-induced recombination centres in heat-treated silicon von Borimskii, V. V., Glinchuk, K. D., Litovhenko, N. M., Salnik, Z. A.

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Annealing behaviour of oxygen-induced recombination centres in silicon von Borimskii, V. V., Glinchuk, K. D., Litovchenko, N. M., Salnik, Z. A.

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New oxygen-induced recombination centres in 600 to 800 °C heat-treated silicon von Borimskii, V. V., Glinchuk, K. D., Litovchenko, N. M., Salnic, Z. A.

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New oxygen-induced recombination centres in 600 to 8000C heat-treated silicon von BORIMSKII, V.V, GLINCHUK, K.D, LITOVCHENKO, N.M, SALNIC, Z.A

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