A cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells von Mediavilla, I, Anaya, J, Galiana, B, Hrachowina, L, Borgström, M T, Jimenez, J

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Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP–InP Core–Shell Nanowires von Göransson, D. J. O, Borgström, M. T, Huang, Y. Q, Messing, M. E, Hessman, D, Buyanova, I. A, Chen, W. M, Xu, H. Q

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The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors von Thelander, C, Dick, K A, Borgström, M T, Fröberg, L E, Caroff, P, Nilsson, H A, Samuelson, L

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Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section von Göransson, D. J. O., Heurlin, M., Dalelkhan, B., Abay, S., Messing, M. E., Maisi, V. F., Borgström, M. T., Xu, H. Q.

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Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors von Mergenthaler, K., Anttu, N., Vainorius, N., Aghaeipour, M., Lehmann, S., Borgström, M. T., Samuelson, L., Pistol, M.-E.

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Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction von Kriegner, D, Wintersberger, E, Kawaguchi, K, Wallentin, J, Borgström, M T, Stangl, J

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Structural investigation of GaInP nanowires using X-ray diffraction von Kriegner, D., Persson, J.M., Etzelstorfer, T., Jacobsson, D., Wallentin, J., Wagner, J.B., Deppert, K., Borgström, M.T., Stangl, J.

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Precursor evaluation for in situ InP nanowire doping von Borgström, M T, Norberg, E, Wickert, P, Nilsson, H A, Trägårdh, J, Dick, K A, Statkute, G, Ramvall, P, Deppert, K, Samuelson, L

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Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures von Jacobsson, D, Persson, J M, Kriegner, D, Etzelstorfer, T, Wallentin, J, Wagner, J B, Stangl, J, Samuelson, L, Deppert, K, Borgström, M T

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Photon upconversion in degenerately sulfur doped InP nanowires von Mergenthaler, K, Lehmann, S, Wallentin, J, Zhang, W, Borgström, M T, Yartsev, A, Pistol, M-E

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Remote p-Doping of InAs Nanowires von Li, H.-Y, Wunnicke, O, Borgström, M. T, Immink, W. G. G, van Weert, M. H. M, Verheijen, M. A, Bakkers, E. P. A. M

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A luminescence study of doping effects in InP-based radial nanowire structures von Lindgren, D, Heurlin, M, Kawaguchi, K, Borgström, M T, Pistol, M-E, Monemar, B, Samuelson, L, Gustafsson, A

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Tunable few-electron quantum dots in InAs nanowires von Shorubalko, I, Pfund, A, Leturcq, R, Borgström, M T, Gramm, F, Müller, E, Gini, E, Ensslin, K

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Modification of the photoluminescence anisotropy of semiconductor nanowires by coupling to surface plasmon polaritons von MUSKENS, O. L, TREFFERS, J, FORCALES, M, BORGSTRÖM, M. T, BAKKERS, E. P. A. M, GOMEZ RIVAS, J

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Local and anisotropic excitation of surface plasmon polaritons by semiconductor nanowires von Rümke, T M, Sánchez-Gil, J A, Muskens, O L, Borgström, M T, Bakkers, E P, Gómez Rivas, J

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Giant optical birefringence in ensembles of semiconductor nanowires von Muskens, O. L., Borgström, M. T., Bakkers, E. P. A. M., Gómez Rivas, J.

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Doping profile of InP nanowires directly imaged by photoemission electron microscopy von Hjort, M., Wallentin, J., Timm, R., Zakharov, A. A., Andersen, J. N., Samuelson, L., Borgström, M. T., Mikkelsen, A.

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Evaluation of Doping in GaP Core-Shell Nanowire pn Junction by Off-Axis Electron Holography von Yazdi, S., Berg, A., Kasama, T., Beleggia, M., Borgström, M. T., Wagner, J.B.

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Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy von Conache, G., Ribayrol, A., Fröberg, L. E., Borgström, M. T., Samuelson, L., Montelius, L., Pettersson, H., Gray, S. M.

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Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared von Karimi, Mohammad, Heurlin, Magnus, Limpert, Steven, Jain, Vishal, Zeng, Xulu, Geijselaers, Irene, Nowzari, Ali, Fu, Ying, Samuelson, Lars, Linke, Heiner, Borgström, Magnus T, Pettersson, Håkan

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