Plasmon filters and resonators in metal-insulator-metal waveguides von Neutens, P, Lagae, L, Borghs, G, Van Dorpe, P

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Ohmic contact formation on n -type Ge von Lieten, R. R., Degroote, S., Kuijk, M., Borghs, G.

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Anodic Etching of n‑GaN Epilayer into Porous GaN and Its Photoelectrochemical Properties von Tseng, W. J, van Dorp, D. H, Lieten, R. R, Vereecken, P. M, Borghs, G

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Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate von Medjdoub, F., Derluyn, J., Cheng, K., Leys, M., Degroote, S., Marcon, D., Visalli, D., Van Hove, M., Germain, M., Borghs, G.

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Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer von Derluyn, J., Boeykens, S., Cheng, K., Vandersmissen, R., Das, J., Ruythooren, W., Degroote, S., Leys, M. R., Germain, M., Borghs, G.

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Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure von Motsnyi, V. F., De Boeck, J., Das, J., Van Roy, W., Borghs, G., Goovaerts, E., Safarov, V. I.

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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy von Cheng, Kai, Leys, M., Degroote, S., Germain, M., Borghs, G.

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Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation von Cheng, Kai, Leys, M., Degroote, S., Bender, H., Favia, P., Borghs, G., Germain, M.

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Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching von Tseng, Wei-Jhih, van Dorp, D. H, Lieten, R. R, Vereecken, P. M, Langer, R, Borghs, G

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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers von Cheng, Kai, Leys, M., Degroote, S., Van Daele, B., Boeykens, S., Derluyn, J., Germain, M., Van Tendeloo, G., Engelen, J., Borghs, G.

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Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode von Van Dorpe, P., Liu, Z., Van Roy, W., Motsnyi, V. F., Sawicki, M., Borghs, G., De Boeck, J.

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Mg doping of GaN by molecular beam epitaxy von Lieten, R R, Motsnyi, V, Zhang, L, Cheng, K, Leys, M, Degroote, S, Buchowicz, G, Dubon, O, Borghs, G

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Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy von Zhang, L., Cheng, K., Degroote, S., Leys, M., Germain, M., Borghs, G.

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Size dependence of microscopic Hall sensor detection limits von Vervaeke, K., Simoen, E., Borghs, G., Moshchalkov, V. V.

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Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers von Lieten, R. R., Afanas’ev, V. V., Thoan, N. H., Degroote, S., Walukiewicz, W., Borghs, G.

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Strain relaxation in GaN nanopillars von Tseng, W. J., Gonzalez, M., Dillemans, L., Cheng, K., Jiang, S. J., Vereecken, P. M., Borghs, G., Lieten, R. R.

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Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics von Martens, K., Wang, W., De Keersmaecker, K., Borghs, G., Groeseneken, G., Maes, H.

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Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design von Das, J., Oprins, H., Hangfeng Ji, Sarua, A., Ruythooren, W., Derluyn, J., Kuball, M., Germain, M., Borghs, G.

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Shape-controlled synthesis of NIR absorbing branched gold nanoparticles and morphology stabilization with alkanethiols von Van de Broek, B, Frederix, F, Bonroy, K, Jans, H, Jans, K, Borghs, G, Maes, G

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A deep-level analysis of Ni–Au/AlN/(1 1 1) p+-Si metal–insulator–semiconductor capacitors von Simoen, E, Visalli, D, Van Hove, M, Leys, M, Borghs, G

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