Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure von Ruppalt, Laura B., Cleveland, Erin R., Champlain, James G., Prokes, Sharka M., Brad Boos, J., Park, Doewon, Bennett, Brian R.

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Mobility enhancement in strained p-InGaSb quantum wells von Bennett, Brian R., Ancona, Mario G., Boos, J. Brad, Shanabrook, Benjamin V.

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Enhancing hole mobility in III-V semiconductors von Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

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Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning von Nainani, Aneesh, Sun, Yun, Irisawa, Toshifumi, Yuan, Ze, Kobayashi, Masaharu, Pianetta, Piero, Bennett, Brian R., Brad Boos, J., Saraswat, Krishna C.

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Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors von Bennett, Brian R., Ancona, Mario G., Boos, J. Brad, Canedy, Corwyn B., Khan, Saara A.

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Enhanced hole mobility and density in GaSb quantum wells von Bennett, Brian R., Chick, Theresa F., Ancona, Mario G., Brad Boos, J.

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Demonstration of a mode-conversion cavity add-drop filter von PRUESSNER, Marcel W, KHURGIN, Jacob B, STIEVATER, Todd H, RABINOVICH, William S, BASS, Robert, BRAD BOOS, J, URICK, Vincent J

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Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors von Yuan, Ze, Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

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Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect von Ali, A, Madan, H, Misra, R, Agrawal, A, Schiffer, P, Boos, J B, Bennett, B R, Datta, S

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Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET von NAINANI, Aneesh, IRISAWA, Toshifumi, ZE YUAN, BENNETT, Brian R, BRAD BOOS, J, NISHI, Yoshio, SARASWAT, Krishna C

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Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits von Bennett, Brian R., Ancona, Mario G., Champlain, James G., Papanicolaou, Nicolas A., Boos, J. Brad

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Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InxGa1-xSb quantum wells von NAINANI, Aneesh, IRISAWA, Toshifumi, BENNETT, Brian R, BRAD BOOS, J, ANCONA, Mario G, SARASWAT, Krishna C

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Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors von Reason, Matthew, Bennett, Brian R., Magno, Richard, Boos, J. Brad

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InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design von Nainani, Aneesh, Yuan, Ze, Krishnamohan, Tejas, Bennett, Brian R., Boos, J. Brad, Reason, Matthew, Ancona, Mario G., Nishi, Yoshio, Saraswat, Krishna C.

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Strained InGaAs/InAlAs quantum wells for complementary III–V transistors von Bennett, Brian R., Chick, Theresa F., Boos, J. Brad, Champlain, James G., Podpirka, Adrian A.

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Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain von Guo, Luke W., Xia, Ling, Bennett, Brian R., Boos, J. Brad, Ancona, Mario G., Alamo, Jesus A. del

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Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- \kappa Dielectric von Barth, Michael, Kumar, Archana, Warner, Jeffrey H., Bennett, Brian R., Cress, Cory D., Boos, J. Brad, Roche, Nicolas J-H, Raine, Melanie, Gaillardin, Marc, Paillet, Philippe, McMorrow, Dale, Saraswat, Krishna, Datta, Suman

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Hole mobility enhancement in In0.41Ga0.59Sb quantum-well field-effect transistors von Xia, Ling, Boos, J. Brad, Bennett, Brian R., Ancona, Mario G., del Alamo, Jesús A.

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Effect of Interface States on the Performance of Antimonide nMOSFETs von Ali, A., Madan, H., Barth, M. J., Boos, J. B., Bennett, B. R., Datta, S.

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Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance von Ali, A., Madan, H., Agrawal, A., Ramirez, I., Misra, R., Boos, J. B., Bennett, B. R., Lindemuth, J., Datta, S.

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