Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing von Chery, N., Zhang, M., Monflier, R., Mallet, N., Seine, G., Paillard, V., Poumirol, J. M., Larrieu, G., Royet, A. S., Kerdilès, S., Acosta-Alba, P., Perego, M., Bonafos, C., Cristiano, F.

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Vibrational density of states and thermodynamics at the nanoscale: the 3D-2D transition in gold nanostructures von Carles, R., Benzo, P., Pécassou, B., Bonafos, C.

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Plasmon-enhanced scattering and charge transfer in few-layer graphene interacting with buried printed 2D-pattern of silver nanoparticles von Carles, R, Bayle, M, Bonafos, C

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Adsorption properties of BSA and DsRed proteins deposited on thin SiO2 layers: optically non-absorbing versus absorbing proteins von Scarangella, A, Soumbo, M, Villeneuve-Faure, C, Mlayah, A, Bonafos, C, Monje, M-C, Roques, C, Makasheva, K

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Optical, structural and electrical characterizations of stacked Hf-based and silicon nitride dielectrics von Khomenkova, L., Normand, P., Gourbilleau, F., Slaoui, A., Bonafos, C.

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Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2 von Garrido Fernandez, B., López, M., Garcı́a, C., Pérez-Rodrı́guez, A., Morante, J. R., Bonafos, C., Carrada, M., Claverie, A.

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Ag doped silicon nitride nanocomposites for embedded plasmonics von Bayle, M., Bonafos, C., Benzo, P., Benassayag, G., Pécassou, B., Khomenkova, L., Gourbilleau, F., Carles, R.

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GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications von Dimitrakis, P, Normand, P, Bonafos, C, Papadomanolaki, E, Iliopoulos, E

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The synthesis of single layers of Ag nanocrystals by ultra-low-energy ion implantation for large-scale plasmonic structures von Carles, R, Farcău, C, Bonafos, C, Benassayag, G, Pécassou, B, Zwick, A

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Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories von Bonafos, C., Spiegel, Y., Normand, P., Ben-Assayag, G., Groenen, J., Carrada, M., Dimitrakis, P., Kapetanakis, E., Sahu, B. S., Slaoui, A., Torregrosa, F.

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Stress measurements of germanium nanocrystals embedded in silicon oxide von Wellner, A., Paillard, V., Bonafos, C., Coffin, H., Claverie, A., Schmidt, B., Heinig, K. H.

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Quantum dots for memory applications von Dimitrakis, P., Normand, P., Ioannou-Sougleridis, V., Bonafos, C., Schamm-Chardon, S., BenAssayag, G., Iliopoulos, E.

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High-k Hf-based layers grown by RF magnetron sputtering von Khomenkova, L, Dufour, C, Coulon, P-E, Bonafos, C, Gourbilleau, F

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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation von Bonafos, C., Carrada, M., Cherkashin, N., Coffin, H., Chassaing, D., Assayag, G. Ben, Claverie, A., Müller, T., Heinig, K. H., Perego, M., Fanciulli, M., Dimitrakis, P., Normand, P.

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Ostwald ripening of end-of-range defects in silicon von Bonafos, C., Mathiot, D., Claverie, A.

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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers von Coffin, H., Bonafos, C., Schamm, S., Cherkashin, N., Assayag, G. Ben, Claverie, A., Respaud, M., Dimitrakis, P., Normand, P.

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Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO2 von López, M., Garrido, B., Garcı́a, C., Pellegrino, P., Pérez-Rodrı́guez, A., Morante, J. R., Bonafos, C., Carrada, M., Claverie, A.

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Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates von Carreras, Josep, Arbiol, J., Garrido, B., Bonafos, C., Montserrat, J.

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Controlled elaboration of large-area plasmonic substrates by plasma process von Pugliara, A, Bonafos, C, Carles, R, Despax, B, Makasheva, K

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Predictive modelling of the dielectric response of plasmonic substrates: application to the interpretation of ellipsometric spectra von Pugliara, A, Bayle, M, Bonafos, C, Carles, R, Respaud, M, Makasheva, K

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