Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si von Nyamhere, C., Cristiano, F., Olivie, F., Essa, Z., Bedel-Pereira, E., Bolze, D., Yamamoto, Y.

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Mechanisms of B deactivation control by F co-implantation von Cowern, N. E. B., Colombeau, B., Benson, J., Smith, A. J., Lerch, W., Paul, S., Graf, T., Cristiano, F., Hebras, X., Bolze, D.

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Advanced activation of ultra-shallow junctions using flash-assisted RTP von Lerch, W., Paul, S., Niess, J., McCoy, S., Selinger, T., Gelpey, J., Cristiano, F., Severac, F., Gavelle, M., Boninelli, S., Pichler, P., Bolze, D.

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On an improved boron segregation calibration from a particularly sensitive power MOS process von Koffel, S., Burenkov, A., Sekowski, M., Pichler, P., Giubertoni, D., Bersani, M., Knaipp, M., Wachmann, E., Schrems, M., Yamamoto, Y., Bolze, D.

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Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing von Lerch, W., Paul, S., Niess, J., McCoy, S., Gelpey, J., Cristiano, F., Severac, F., Fazzini, P., Martinez-Limia, A., Pichler, P., Kheyrandish, H., Bolze, D.

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The impact of supersaturated carbon on transient enhanced diffusion von Rücker, H., Heinemann, B., Bolze, D., Kurps, R., Krüger, D., Lippert, G., Osten, H. J.

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Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon von Paul, S., Lerch, W., Colombeau, B., Cowern, N. E. B., Cristiano, F., Boninelli, S., Bolze, D.

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Spike Annealing of Shallow Arsenic and Phosphorus Implants in Different Gaseous Ambient von Paul, S, Lerch, W, Bolze, D

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Formation of shallow source/drain extensions for metal–oxide–semiconductor field-effect-transistors by antimony implantation von Rücker, H., Heinemann, B., Barth, R., Bolze, D., Melnik, V., Krüger, D., Kurps, R.

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Characterization of silicide stacks by combination of spectroscopic ellipsometry and reflectometry von Fursenko, O., Bolze, D., Costina, I., Zaumseil, P., Huelsmann, T., Niess, J., Lerch, W.

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Michael White: marcos teóricos da Prática Narrativa von MATHEUS, Maria Salete, BOLZE, S. D. A.

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Effects of various Co/TiN and Co/Ti layer stacks and the salicide rapid thermal process conditions on cobalt silicide formation von Buschbaum, S., Fursenko, O., Bolze, D., Wolansky, D., Melnik, V., Nieß, J., Lerch, W.

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Development of spectroscopic ellipsometry as in-line control for Co SALICIDE process von Fursenko, O, Bauer, J, Goryachko, A, Bolze, D, Zaumseil, P, Krüger, D, Wolansky, D, Bugiel, E, Tillack, B

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Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001) von Osten, H. J., Griesche, J., Gaworzewski, P., Bolze, K. D.

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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay von Heinemann, B, Barth, R, Bolze, D, Drews, J, Fischer, G G, Fox, A, Fursenko, O, Grabolla, T, Haak, U, Knoll, D, Kurps, R, Lisker, M, Marschmeyer, S, Rücker, H, Schmidt, D, Schmidt, J, Schubert, M A, Tillack, B, Wipf, C, Wolansky, D, Yamamoto, Y

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Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non-Contact Junction Photo-Voltage Metrology von Faifer, V N, Schroder, D K, Current, M I, Clarysse, T, Timans, P J, Zangerle, T, Vandervorst, W, Wong, T M H, Moussa, A, McCoy, S, Gelpey, J, Lerch, W, Paul, S, Bolze, D

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Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology von Winkler, W, Borngräber, J, Heinemann, B, Rücker, H, Barth, R, Bauer, J, Bolze, D, Drews, J, Ehwald, K.-E, Grabolla, T, Haak, U, Höppner, W, Knoll, D, Krüger, D, Kuck, B, Kurps, R, Marschmeyer, M, Richter, H, Schley, P, Schmidt, D, Scholz, R, Tillack, B, Wolansky, D, Wulf, H.-E, Yamamoto, Y, Zaumseil, P

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Atomic layer processing for doping of SiGe von Tillack, Bernd, Yamamoto, Yuji, Bolze, Detlef, Heinemann, Bernd, Rücker, Holger, Knoll, Dieter, Murota, Junichi, Mehr, Wolfgang

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Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors von Wolansky, D., Bolze, D., Yamamoto, Y., Knoll, D., Tillack, Bernd, Schley, P., Fischer, G.G.

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Mortality rate of gestational trophoblastic neoplasia with a FIGO score of ≥13 von Bolze, Pierre-Adrien, MD, Riedl, Cécilia, MD, Massardier, Jérôme, MD, Lotz, Jean-Pierre, MD, PhD, You, Benoit, MD, PhD, Schott, Anne-Marie, MD, PhD, Hajri, Touria, Ms, Golfier, François, MD, PhD

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