Brief Review of Surface Passivation on III-V Semiconductor von Zhou, Lu, Bo, Baoxue, Yan, Xingzhen, Wang, Chao, Chi, Yaodan, Yang, Xiaotian

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Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal–Insulator Transition von Yao, Yanping, Bo, Baoxue, Liu, Chunling

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Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide von Qiao, Zhongliang, Li, Xiang, Sia, Jia Xu Brian, Wang, Wanjun, Wang, Hong, Li, Zaijin, Zhao, Zhibin, Li, Lin, Gao, Xin, Bo, Baoxue, Qu, Yi, Liu, Guojin, Liu, Chongyang

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Ultraviolet light induced degradation of luminescence in CsPbBr3 perovskite nanocrystals von Li, Ji, Wang, Li, Yuan, Xi, Bo, Baoxue, Li, Haibo, Zhao, Jialong, Gao, Xin

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Passivation Effect on ZnO Films by SF6 Plasma Treatment von Xu, Yumeng, Bo, Baoxue, Gao, Xin, Qiao, Zhongliang

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Mode-Locking Thulium-Doped Fiber Laser With 1.78-GHz Repetition Rate Based on Combination of Nonlinear Polarization Rotation and Semiconductor Saturable Absorber Mirror von Qingsong, Jia, Tianshu, Wang, Wanzhuo, Ma, Zhen, Wang, Qingchao, Su, Baoxue, Bo, Huilin, Jiang

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All-Solid-State DUV Light Source by Quadrupling of an Acousto-Optically Q-Switched Nd:YVO4 Laser von Zhao, Zhibin, Chen, Hao, Liu, Guojun, Cheng, Cheng, Li, Quan, Qiao, Zhongliang, Qu, Yi, Xie, Qiongtao, Zhu, Jiang, Zheng, Quan, Bo, Baoxue

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Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser von Qiao, Zhongliang, Li, Xiang, Sia, Jia Xubrian, Wang, Wanjun, Wang, Hong, Li, Lin, Li, Zaijin, Zhao, Zhibin, Qu, Yi, Gao, Xin, Bo, Baoxue, Liu, Chongyang

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The hopping variable range conduction in amorphous InAs thin films von Yao, Yanping, Bo, Baoxue, Liu, Chunling

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Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation von Xu, Yumeng, Gao, Xin, Zhang, Xiaolei, Qiao, Zhongliang, Zhang, Jing, Zhou, Lu, Bo, Baoxue

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Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures von Li, Junmei, Guo, Wei, Jiang, Jie an, Gao, Pingqi, Bo, Baoxue, Ye, Jichun

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InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering von Zhou, Lu, Gao, Xin, Xu, Liuyang, Qiao, Zhongliang, Bo, Baoxue

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Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing von QIAO ZHONGLIANG, TANG XIAOHONG, KENNETH, Lee Eng Kian, LIM PENG HUEI, BO BAOXUE

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Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing von Qiao, Zhongliang, Tang, Xiaohong, Li, Xiang, Bo, Baoxue, Gao, Xin, Qu, Yi, Liu, Chongyang, Wang, Hong

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Fabrication of Integrated 808 nm Wavelength SLDs With a Ring Seed Source and a Tapered Amplifier von Zhang, Siyu, Qiao, Zhongliang, Bo, Baoxue, Gao, Xin, Qu, Yi, Liu, Guojun

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Study on extended depth of field for a planar flow cytometric microimaging system von Qu, Hongfeng, Tong, Shoufeng, Bo, Baoxue

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The degradation of structure and luminescence in CsPbBr3 perovskite nanocrystals under UV light illumination von Li, Ji, Bo, Baoxue, Gao, Xin

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High-performance 1.06- μ m InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers von Qiao, Zhongliang, Li, Xiang, Wang, Hong, Li, Te, Gao, Xin, Qu, Yi, Bo, Baoxue, Liu, Chongyang

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Dynamic modulation transfer function analysis and short exposure technique for planar flow cytometric microimaging system von Qu, Hongfeng, Tong, Shoufeng, Bo, Baoxue

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GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film von Zhang, Yue, Gao, Xin, Wang, Jinghui, Wang, Zhihao, Liu, Shuainan, Su, Peng, Qiao, Zhongliang, Bo, Baoxue

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