CMOS-compatible a-Si metalenses on a 12-inch glass wafer for fingerprint imaging von Hu, Ting, Zhong, Qize, Li, Nanxi, Dong, Yuan, Xu, Zhengji, Fu, Yuan Hsing, Li, Dongdong, Bliznetsov, Vladimir, Zhou, Yanyan, Lai, Keng Heng, Lin, Qunying, Zhu, Shiyang, Singh, Navab

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Si metasurface half-wave plates demonstrated on a 12-inch CMOS platform von Dong, Yuan, Xu, Zhengji, Li, Nanxi, Tong, Jinchao, Fu, Yuan Hsing, Zhou, Yanyan, Hu, Ting, Zhong, Qize, Bliznetsov, Vladimir, Zhu, Shiyang, Lin, Qunying, Zhang, Dao Hua, Gu, Yuandong, Singh, Navab

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Demonstration of color display metasurfaces via immersion lithography on a 12-inch silicon wafer von Hu, Ting, Tseng, Chih-Kuo, Fu, Yuan Hsing, Xu, Zhengji, Dong, Yuan, Wang, Shijie, Lai, Keng Heng, Bliznetsov, Vladimir, Zhu, Shiyang, Lin, Qunying, Gu, Yuandong

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Investigation of etching properties of metal nitride/high- k gate stacks using inductively coupled plasma von Hwang, Wan Sik, Chen, Jinghao, Yoo, Won Jong, Bliznetsov, Vladimir

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Deep SiO2 etching with Al and AlN masks for MEMS devices von Bliznetsov, Vladimir, Lin, Hua Mao, Zhang, Yue Jia, Johnson, David

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CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers von Xu, Zhengji, Dong, Yuan, Tseng, Chih-Kuo, Hu, Ting, Tong, Jinchao, Zhong, Qize, Li, Nanxi, Sim, Larry, Lai, Keng Heng, Lin, Ying, Li, Dongdong, Li, Yu, Bliznetsov, Vladimir, Fu, Yuan-Hsing, Zhu, Shiyang, Lin, Qunying, Zhang, Dao Hua, Gu, Yuandong, Singh, Navab, Kwong, Dim-Lee

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MEMS Industry-Worth Etching to Fabricate Tapered Structures in SiO 2 von Bliznetsov, Vladimir, Li, Bin, Lee, Jae Wung, Lin, Huamao

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Plasma Etching for Sub-45-nm TaN Metal Gates on High- k Dielectrics von Bliznetsov, V.N., Bera, L.K., Haw Yun Soo, Balasubramanian, N., Kumar, R., Guo-Qiang Lo, Won Jong Yoo, Chih Hung Tung, Linn, L.

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Effects of SiO2∕Si3N4 hard masks on etching properties of metal gates von Hwang, Wan Sik, Cho, Byung-Jin, Chan, Daniel S. H., Bliznetsov, Vladimir, Yoo, Won Jong

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MEMS Industry-Worth Etching to Fabricate Tapered Structures in SiO2 von Bliznetsov, Vladimir, Bin Li, Jae Wung Lee, Huamao Lin

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Deep SiO 2 etching with Al and AlN masks for MEMS devices von Bliznetsov, Vladimir, Lin, Hua Mao, Zhang, Yue Jia, Johnson, David

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Deep SiO sub(2) etching with Al and AlN masks for MEMS devices von Bliznetsov, Vladimir, Lin, Hua Mao, Zhang, Yue Jia, Johnson, David

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High-throughput anisotropic plasma etching of polyimide for MEMS von Bliznetsov, Vladimir, Manickam, Anbumalar, Chen, Junwei, Ranganathan, Nagarajan

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Effect of etching process deviations and photoresist stripping on contact yield of copper dual damascene metallization von KRISHNAMOORTHY, Ahila, BLIZNETSOV, Vladimir, HUI LENG TAY, BO YU

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Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source∕drain stressors von Ang, Kah-Wee, Chui, King-Jien, Bliznetsov, Vladimir, Tung, Chih-Hang, Du, Anyan, Balasubramanian, Narayanan, Samudra, Ganesh, Li, Ming Fu, Yeo, Yee-Chia

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Improving aluminum nitride plasma etch process for MEMS applications von Bliznetsov, Vladimir, Johari, Badrul Hisam Bin, Chentir, Mohamed Tahar, Li, Wei Hong, Wong, Lai Yin, Merugu, Srinivas, Zhang, Xiao Lin, Singh, Navab

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Development of plasma etching process for sub-50 nm TaN gate von Bliznetsov, Vladimir, Kumar, Rakesh, Bera, Lakshmi Kanta, Yip, Loh Wei, Du, Anyan, Hui, Tang Ern

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Investigation of etching properties of metal nitride/high- k gate stacksusing inductively coupled plasma von Hwang, Wan Sik, Chen, Jinghao, Yoo, Won Jong, Bliznetsov, Vladimir

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Integrated process of photoresist trimming and dielectric hard mask etching for sub-50 nm gate patterning von Bliznetsov, Vladimir, Kumar, Rakesh, Lin, Huizhen, Ang, Kah-Wee, Yoo, Won Jong, Du, Anyan

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Challenges of pattern transfer for ultra-low- k OSG film Aurora™ULK von Bliznetsov, Vladimir, Chua, May Lee, Roy, M.-M., Singh, N.

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