Semipolar single component GaN on planar high index Si(11h) substrates von Ravash, Roghaiyeh, Blaesing, Juergen, Dadgar, Armin, Krost, Alois

Volltext

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1―xN on Si (111) von SAENGKAEW, Phannee, DADGAR, Armin, BLAESING, Juergen, HEMPEL, Thomas, VEIT, Peter, CHRISTEN, Juergen, KROST, Alois

Volltext

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers von Lautenschlaeger, Stefan, Eisermann, Sebastian, Hofmann, Michael N., Roemer, Udo, Pinnisch, Melanie, Laufer, Andreas, Meyer, Bruno K., von Wenckstern, Holger, Lajn, Alexander, Schmidt, Florian, Grundmann, Marius, Blaesing, Juergen, Krost, Alois

Volltext

Spontaneous and Position-Controlled Epitaxial Growth of ZnO Nanowires on AlN/Si by CVD von Kolhep, Maximilian, Bläsing, Jürgen, Strittmatter, André, Zacharias, Margit

Volltext

High‑Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics von Manjeshwar, Sushanth Kini, Ciers, Anastasiia, Hellman, Fia, Bläsing, Jürgen, Strittmatter, André, Wieczorek, Witlef

Volltext

Sputter Epitaxy of AlN and GaN on Si(111) von Dadgar, Armin, Hörich, Florian, Borgmann, Ralf, Bläsing, Jürgen, Schmidt, Gordon, Veit, Peter, Christen, Jürgen, Strittmatter, André

Volltext

High resistive buffer layers by Fermi level engineering von Dadgar, Armin, Borgmann, Ralf, Bläsing, Jürgen, Strittmatter, André

Volltext

Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition von Kolhep, Maximilian, Sun, Cheng, Bläsing, Jürgen, Christian, Björn, Zacharias, Margit

Volltext

Analysis of InAsSb/GaAs submonolayer stacks von Quandt, David, Bläsing, Jürgen, Strittmatter, André

Volltext

Blue shift of the absorption onset and bandgap bowing in rutile GexSn1−xO2 von Kluth, Elias, Nagashima, Yo, Osawa, Shohei, Hirose, Yasushi, Bläsing, Jürgen, Strittmatter, André, Goldhahn, Rüdiger, Feneberg, Martin

Volltext

Laser-assisted local metal–organic vapor phase epitaxy von Trippel, Max, Bläsing, Jürgen, Wieneke, Matthias, Dadgar, Armin, Schmidt, Gordon, Bertram, Frank, Christen, Jürgen, Strittmatter, André

Volltext

The impurity size-effect and phonon deformation potentials in wurtzite GaN von Kluth, Elias, Wieneke, Matthias, Bläsing, Jürgen, Witte, Hartmut, Lange, Karsten, Dadgar, Armin, Goldhahn, Rüdiger, Feneberg, Martin

Volltext

Properties of C‐doped GaN von Lesnik, Andreas, Hoffmann, Marc P., Fariza, Aqdas, Bläsing, Jürgen, Witte, Hartmut, Veit, Peter, Hörich, Florian, Berger, Christoph, Hennig, Jonas, Dadgar, Armin, Strittmatter, André

Volltext

MOVPE growth of high-quality Al0.1Ga0.9N on Si(111) substrates for UV-LEDs von Saengkaew, Phannee, Dadgar, Armin, Blaesing, Juergen, Bastek, Barbara, Bertram, Frank, Reiher, Fabian, Hums, Christoph, Noltemeyer, Martin, Hempel, Thomas, Veit, Peter, Christen, Juergen, Krost, Alois

Volltext

Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al x Ga1−x )2O3 alloys von Kluth, Elias, Anhar Uddin Bhuiyan, A F M, Meng, Lingyu, Bläsing, Jürgen, Zhao, Hongping, Strittmatter, André, Goldhahn, Rüdiger, Feneberg, Martin

Volltext

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet von Schmidt, Gordon, Berger, Christoph, Veit, Peter, Metzner, Sebastian, Bertram, Frank, Bläsing, Jürgen, Dadgar, Armin, Strittmatter, André, Christen, Jürgen, Callsen, Gordon, Kalinowski, Stefan, Hoffmann, Axel

Volltext

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping von Dadgar, Armin, Bläsing, Jürgen, Diez, Annette, Krost, Alois

Volltext

Optical properties of cubic GaN from 1 to 20 eV von Feneberg, Martin, Röppischer, Marcus, Cobet, Christoph, Esser, Norbert, Schörmann, Jörg, Schupp, Thorsten, As, Donat J., Hörich, Florian, Bläsing, Jürgen, Krost, Alois, Goldhahn, Rüdiger

Volltext

Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis von Lesnik, Andreas, Bläsing, Jürgen, Hennig, Jonas, Dadgar, Armin, Krost, Alois

Volltext

Low-resistivity vertical current transport across AlInN/GaN interfaces von Sana, Prabha, Seneza, Cleophace, Berger, Christoph, Witte, Hartmut, Schmidt, Marc-Peter, Bläsing, Jürgen, Neugebauer, Silvio, Hoerich, Florian, Dadgar, Armin, Strittmatter, André

Volltext