3D unsteady analysis of melt flow and segregation during EFG Si crystal growth von Smirnova, O.V., Kalaev, V.V., Seidl, A., Birkmann, B.

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Silicon EFG process development by multiscale modeling von Müller, M., Birkmann, B., Mosel, F., Westram, I., Seidl, A.

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Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling von Müller, G., Birkmann, B.

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Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia von Sun, G., Meissner, E., Hussy, S., Birkmann, B., Friedrich, J., Müller, G.

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Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN von Birkmann, B., Hussy, S., Sun, G., Berwian, P., Meissner, E., Friedrich, J., Müller, G.

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Types and origin of dislocations in large GaAs and InP bulk crystals with very low dislocation densities von Müller, G., Schwesig, P., Birkmann, B., Härtwig, J., Eichler, S.

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Investigation of residual dislocations in VGF-grown Si-doped GaAs von Birkmann, B., Stenzenberger, J., Jurisch, M., Härtwig, J., Alex, V., Müller, G.

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Analysis of silicon incorporation into VGF-grown GaAs von Birkmann, B., Weingärtner, R., Wellmann, P., Wiedemann, B., Müller, G.

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Capability of photoluminescence for characterization of multi-crystalline silicon von Mchedlidze, T., Seifert, W., Kittler, M., Blumenau, A. T., Birkmann, B., Mono, T., Müller, M.

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Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements von Birkmann, B., Salcianu, C., Meissner, E., Hussy, S., Friedrich, J., Müller, G.

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Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method von Birkmann, B, Rasp, M, Stenzenberger, J, Müller, G

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Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs von Rasp, M, Birkmann, B, Müller, G

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Morphology and microstructure of a -plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG) von Hussy, S., Meissner, E., Birkmann, B., Brauer, I., Off, J., Scholz, F., Strunk, H. P., Müller, G.

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Characterisation of GaN crystals and epilayers grown from a solution at room pressure von Meissner, E., Birkmann, B., Hussy, S., Sun, G., Friedrich, J., Mueller, G.

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Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping von Wellmann, P. J., Albrecht, A., Künecke, U., Birkmann, B., Mueller, G., Jurisch, M.

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Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals von WIEDEMANN, B, MEYER, J. D, JOCKEL, D, FREYHARDT, H. C, BIRKMANN, B, MÜLLER, G

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Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling von MÜLLER, G, BIRKMANN, B

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Analysis of silicon incorporation into VGF-grown GaAs von BIRKMANN, B, WEINGRTNER, R, WELLMANN, P, WIEDEMANN, B, MÜLLER, G

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Verfahren zur Erhoehung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze von Friedrich, J, Mueller, G, Meissner, E, Birkmann, B, Hussy, S

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Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen von Friedrich, J, Mueller, G, Apelt, R, Meissner, E, Birkmann, B, Hussy, S

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