The Influence of Thermal Disorder on the Absorption Edge in the Tauc Region of a-Si:H von Bindemann, R., Paetzold, O.

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The Meyer- Neldel Rule and the Fundamental Pre-Exponential Factor in the Conductivity of a-Si:H von Drüsedau, T., Bindemann, R.

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Relaxation and Recombination of Photoexcited Carriers in a-Si: H Calculated by Monte-Carlo Simulations von Gutschker, O., Bindemann, R.

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Defect density and photoelectrical properties of alternative doped amorphous silicon von Schmal, J., Kirsch, R., Albert, M., Stahr, F., Bindemann, R.

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Time-resolved transients of IR-stimulated luminescence and conductivity in a-Si:H von Vollmar, H.-P., Botzler, P., Sachse, J.-U., Bindemann, R.

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Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputtering von Drüsedau, T., Eckler, M., Bindemann, R.

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The ordinary and generalized Meyer-Neldel rule in a-Si:H calculated by the statistical fermi level shift von Drüsedau, T., Wegener, D., Bindemann, R.

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Photoluminescence of nitrogen-doped VPE GaAs von Schwabe, R., Seifert, W., Bugge, F., Bindemann, R., Agekyan, V.F., Pogarev, S.V.

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Mobility-Lifetime Products of a-Si:H Prepared at High Deposition Rate with Triethylboron von Böhme, T., Kluge, G., Kottwitz, A., Bindemann, R.

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Enhancement of Photoconductivity in Magnetron-Sputtered a-Si:H Doped with Nitrogen von Drüsedau, T., Eckler, M., Bindemann, R., Fiedler, H.

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Defect Density of a-Si: H(B) Prepared at High Deposition Rate with Triethylboron von Schmal, J., Kluge, G., Kottwitz, A., Bindemann, R., Schade, K.

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Deposition of a-Si:H by magnetron sputter-assisted plasma-CVD: preparation and physical properties von KOTTWITZ, A, FUCHS, M, SCHADE, K, BINDEMANN, R, DRÜSEDAU, T, GERLACH, W

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Photoelectrical properties of a-Si: H in dependence on growth conditions and degradation von Drescher, D., Schmal, J., Bindemann, R., Kottwitz, A., Albert, M., Mönch, J. P.

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Electron-hole liquid in GaP the influence of the isoelectronic impurity nitrogen von Schwabe, R., Thuselt, F., Weinert, H., Bindemann, R.

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Energy States of Isolated Donor-Acceptor Pairs and the Influence of Polarization Interaction on the Pair Energy von Bindemann, R., Unger, K.

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Luminescence from electron-hole liquid in gallium phosphide influenced by the isoelectronic impurity nitrogen von Schwabe, R., Thuselt, F., Weinert, H., Bindemann, R.

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Luminescence from Electron-Hole Drops in Undoped GaP von Schwabe, R., Thuselt, F., Weinert, H., Bindemann, R., Unger, K.

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Decay kinetics and phase behaviour of a dense carrier system in GaP:N von Weinert, H., Bindemann, R., Schwabe, R., Thuselt, F., Unger, K.

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Donor-Acceptor Pair and Bound Exçiton Recombination in Epitaxially Grown AlxGa1−xP von Bindemann, R., Zehe, A., Buchheiser, K., Kühn, G.

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Radiative recombination from electron-hole drops in n-doped GaP von Schwabe, R., Thuselt, F., Bindemann, R., Seifert, W., Jacobs, K.

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