Nucleation kinetics of Si quantum dots on SiO2 von Nicotra, G., Puglisi, R. A., Lombardo, S., Spinella, C., Vulpio, M., Ammendola, G., Bileci, M., Gerardi, C.

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Nanocrystal Memory Cell Integration in a Stand-Alone 16-Mb nor Flash Device von Gerardi, C., Ancarani, V., Portoghese, R., Giuffrida, S., Bileci, M., Bimbo, G., Brafa, O., Mello, D., Ammendola, G., Tripiciano, E., Puglisi, R., Lombardo, S.A.

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Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2 von PUGLISI, R. A, NICOTRA, G, LOMBARDO, S, SPINELLA, C, AMMENDOLA, G, BILECI, M, GERARDI, C

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Nanocrystal memories for FLASH device applications von Ammendola, Giuseppe, Ancarani, Valentina, Triolo, Virginia, Bileci, Marco, Corso, Domenico, Crupi, Isodiana, Perniola, Luca, Gerardi, Cosimo, Lombardo, Salvatore, DeSalvo, Barbara

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Nanocrystal Memory Cell Integration in a Stand-Alone 16-Mb @@inor@ Flash Device von Gerardi, C, Ancarani, V, Portoghese, R, Giuffrida, S, Bileci, M, Bimbo, G, Brafa, O, Mello, D, Ammendola, G, Tripiciano, E, Puglisi, R, Lombardo, S A

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Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO 2 von Puglisi, R.A., Nicotra, G., Lombardo, S., Spinella, C., Ammendola, G., Bileci, M., Gerardi, C.

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Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals von Ammendola, G., Vulpio, M., Bileci, M., Nastasi, N., Gerardi, C., Renna, G., Crupi, I., Nicotra, G., Lombardo, S.

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Use of TixTiN as cap layer for the formation of cobalt silicide von VULPIO, M, FAZIO, D, BILECI, M, MELLO, D, GERARDI, C

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