High quality aluminum nitride epitaxial layers grown on sapphire substrates von Saxler, A., Kung, P., Sun, C. J., Bigan, E., Razeghi, M.

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Improvements of phase‐modulated ellipsometry von Acher, O., Bigan, E., Drévillon, B.

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8–13 μm InAsSb heterojunction photodiode operating at near room temperature von Kim, J. D., Kim, S., Wu, D., Wojkowski, J., Xu, J., Piotrowski, J., Bigan, E., Razeghi, M.

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Detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical-vapor deposition von Besikci, C., Choi, Y. H., Labeyrie, G., Bigan, E., Razeghi, M., Cohen, J. B., Carsello, J., Dravid, V. P.

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Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition von Staveteig, P. T., Choi, Y. H., Labeyrie, G., Bigan, E., Razeghi, M.

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Optimization of optical waveguide modulators based on Wannier-Stark localization: an experimental study von Bigan, E., Allovon, M., Carre, M., Braud, C., Carenco, A., Voisin, P.

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The quantum Ising chain for beginners von Mbeng, Glen Bigan, Russomanno, Angelo, Santoro, Giuseppe E.

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Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz von Devaux, F., Bigan, E., Ougazzaden, A., Pierre, B., Huet, F., Carre, M., Carenco, A.

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p -doped GaAs/Ga0.51In0.49P quantum well intersub-band photodetectors von Hoff, J., He, X., Erdtmann, M., Bigan, E., Razeghi, M., Brown, G. J.

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Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate von Choi, Y. H., Staveteig, P. T., Bigan, E., Razeghi, M.

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Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal-organic chemical-vapor deposition von Diaz, J., Yi, H. J., Erdtmann, M., He, X., Kolev, E., Garbuzov, D., Bigan, E., Razeghi, M.

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Background limited performance in p -doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors von Hoff, J., Kim, S., Erdtmann, M., Williams, R., Piotrowski, J., Bigan, E., Razeghi, M., Brown, G. J.

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On Necessary and Sufficient Conditions for Proto-cell Stationary Growth von Bigan, E., Steyaert, J.M., Douady, S.

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Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H-SiC substrates von Sun, C. J., Kung, P., Saxler, A., Ohsato, H., Bigan, E., Razeghi, M., Gaskill, D. K.

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Compatible laser emission and optical waveguide modulation at 1.5 μm using Wannier-Stark localization von BIGAN, E, HARMAND, J. C, ALLOVON, M, CARRE, M, CARENCO, A, VOISIN, P

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MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates von Razeghi, M., Defour, M., Omnes, F., Maurel, P., Bigan, E., Acher, O., Nagle, J., Brillouet, F., Portal, J.C.

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Connector, battery and electric equipment von WANG XINGLONG, HE BIGAN, YANG ZHUOYUN, WU KAI

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Safe elevator capable of preventing falling von LUO JUNHUA, YANG JIN, HE BIGAN

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Very low drive voltage optical waveguide modulation in an InGaAs/InAlAs superlattice von Bigan, E., Allovon, M., Carre, M., Voisin, P.

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Analysis of spectral response in P-type GaAs/GaInP QWIPs von Hoff, J., Jelen, C., Slivken, S., Bigan, E., Razeghi, M., Brown, G.J.

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