Favourable growth conditions for the preparation of bulk AlN single crystals by PVT von Hartmann, C, Matiwe, L, Wollweber, J, Gamov, I, Irmscher, K, Bickermann, M, Straubinger, T

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Carbon pair defects in aluminum nitride von Gamov, I., Hartmann, C., Wollweber, J., Dittmar, A., Straubinger, T., Bickermann, M., Kogut, I., Fritze, H., Irmscher, K.

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Melt growth and properties of bulk BaSnO3 single crystals von Galazka, Z, Uecker, R, Irmscher, K, Klimm, D, Bertram, R, Kwasniewski, A, Naumann, M, Schewski, R, Pietsch, M, Juda, U, Fiedler, A, Albrecht, M, Ganschow, S, Markurt, T, Guguschev, C, Bickermann, M

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Crystal growth and characterization of the pyrochlore Tb2Ti2O7 von Klimm, D, Guguschev, C, Kok, D. J, Naumann, M, Ackermann, L, Rytz, D, Peltz, M, Dupré, K, Neumann, M. D, Kwasniewski, A, Schlom, D. G, Bickermann, M

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Czochralski growth and characterization of cerium doped calcium scandate von Guguschev, C, Philippen, J, Kok, D. J, Markurt, T, Klimm, D, Hinrichs, K, Uecker, R, Bertram, R, Bickermann, M

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Wet KOH etching of freestanding AlN single crystals von Bickermann, M., Schmidt, S., Epelbaum, B.M., Heimann, P., Nagata, S., Winnacker, A.

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Characterization of bulk AlN with low oxygen content von Bickermann, M., Epelbaum, B.M., Winnacker, A.

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Structural properties of aluminum nitride bulk single crystals grown by PVT von Bickermann, M., Epelbaum, B. M., Filip, O., Heimann, P., Nagata, S., Winnacker, A.

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On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield von Bickermann, M., Weingärtner, R., Winnacker, A.

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Orientation-dependent properties of aluminum nitride single crystals von Bickermann, M., Heimann, P., Epelbaum, B. M.

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Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates von Epelbaum, Boris M., Winnacker, Albrecht, Bickermann, Matthias, Heimann, Paul, Filip, Octavian, Nagata, S.

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Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient von Herro, Z.G., Epelbaum, B.M., Bickermann, M., Masri, P., Winnacker, A.

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Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals von Epelbaum, Boris M., Winnacker, Albrecht, Bickermann, Matthias, Filip, Octavian

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Seeded PVT Growth of Aluminum Nitride on Silicon Carbide von Bickermann, Matthias, Epelbaum, Boris M., Winnacker, Albrecht

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Growth of 6H–SIC crystals along the [ 0 1 1 ¯ 5 ] direction von Herro, Z.G., Epelbaum, B.M., Bickermann, M., Seitz, C., Magerl, A., Winnacker, A.

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Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect von Gamov, I., Lyons, J. L., Gärtner, G., Irmscher, K., Richter, E., Weyers, M., Wagner, M. R., Bickermann, M.

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Analysis on defect generation during the SiC bulk growth process von Hofmann, D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P.J., Winnacker, A.

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Initial growth stage in PVT growth of AlN on SiC substrates: Influence of Al2O3 von Heimann, Paul, Pfeiffer, C., Bickermann, M., Epelbaum, B. M., Nagata, S., Winnacker, A.

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In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging von Wellmann, P.J, Bickermann, M, Hofmann, D, Kadinski, L, Selder, M, Straubinger, T.L, Winnacker, A

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Defect-selective etching of aluminum nitride single crystals von Bickermann, M., Schmidt, S., Epelbaum, B. M., Heimann, P., Nagata, S., Winnacker, A.

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