A Method to Extract the Accurate Junction Temperature of an IGCT During Conduction Using Gate-Cathode Voltage von Vemulapati, Umamaheswara Reddy, Bianda, Enea, Torresin, Daniele, Arnold, Martin, Agostini, Francesco

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High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs von Baumann, David, Mengotti, Elena, Jormanainen, Joni, Bettega, Jason, Bianda, Enea, Wirths, Stephan

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PCB Embedded Semiconductors for Low-Voltage Power Electronic Applications von Kearney, Daniel J., Kicin, Slavo, Bianda, Enea, Krivda, Andrej

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Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs von Wirths, Stephan, Torresin, Daniele, Romano, Gianpaolo, Mihaila, Andrei, Knoll, Lars, Bianda, Enea

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Short Circuit Ruggedness of 600 V SiC Trench JFETs von Sundaramoorthy, Vinoth, Mihaila, Andrei, Knoll, Lars, Romano, Gianpaolo, Bianda, Enea, Kranz, Lukas, Arango, Yulieth, Wirths, Stephan, Bellini, Marco

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An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode von Canales, Francisco, Kranz, Lukas, Soler, Victor, Alfieri, Giovanni, Badstübner, Uwe, Mihaila, Andrei, Knoll, Lars, Godignon, Philippe, Rahimo, Munaf, Bianda, Enea

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Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs von Banu, Viorel, Montserrat, Josep, Kranz, Lukas, Cabello, Maria, Godignon, Philippe, Bianda, Enea, Knoll, Lars, Mihaila, Andrei, Rebollo, Jose, Soler, Victor

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Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications von Rahimo, Munaf, Kranz, Lukas, Alfieri, Giovanni, Mihaila, Andrei, Knoll, Lars, Bellini, Marco, Papadopoulos, Charalampos, Bianda, Enea

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Impact of channel mobility improvement using boron diffusion on different power MOSFETs voltage classes von Soler, Victor, Cabello, Maria, Berthou, Maxime, Montserrat, Josep, Rebollo, Jose, Godignon, Philippe, Bianda, Enea, Mihaila, Andrei

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On the influence of active area design on the performance of SiC JBS diodes von Mihaila, A., Minamisawa, R. A., Knoll, L., Sundaramoorthy, V. K., Bianda, E., Bartolf, H., Alfieri, G., Rahimo, M.

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Characterization of a 6.5kV IGBT for medium-voltage high-power resonant DC-DC converter von Dujic, D., Steinke, G., Bianda, E., Lewdeni-Schmid, S., Zhao, C., Steinke, J. K.

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DIAGNOSIS AND PROGNOSIS OF IGBT MODULES von Bianda, Enea, Firla, Marcin, Vulli, Aleksi, Schlottig, Gerd, Orkisz, Michal

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DIAGNOSIS AND PROGNOSIS OF IGBT MODULES von Bianda, Enea, Firla, Marcin, Vulli, Aleksi, Schlottig, Gerd, Orkisz, Michal

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FULL-BRIDGE INVERTER WITH UNIPOLAR SWITCHING SCHEME AND ITS METHOD OF OPERATION von Li, Tin-Ho, Bianda, Enea, Ho, Ngai-Man, Huusari, Juha

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Dielectric barrier discharge for ballast water treatment using optimized voltage shape control von Bianda, Enea, Rodriguez-Vilches, Seila, Kassubek, Frank, Carstensen, Jan, Votteler, Torsten

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DIELECTRIC BARRIER DISCHARGE FOR BALLAST WATER TREATMENT USING OPTIMIZED VOLTAGE SHAPE CONTROL von KASSUBEK, Frank, RODRIGUEZ-VILCHES, Seila, VOTTELER, Torsten, BIANDA, Enea, CARSTENSEN, Jan

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Full-bridge inverter with unipolar switching scheme and its method of operation von Li, Tin-Ho, Bianda, Enea, Ho, Ngai-Man, Huusari, Juha

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BALLAST WATER TREATMENT APPARATUS AND BALLAST WATER TREATMENT SYSTEM von KASSUBEK, Frank, ORTIZ, Gabriel, PANOUSIS, Emmanouil, RODRIGUEZ-VILCHES, Seila, VOTTELER, Torsten, BIANDA, Enea, CARSTENSEN, Jan, GARYFALLOS, Angelos

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FULL-BRIDGE INVERTER WITH UNIPOLAR SWITCHING SCHEME AND ITS METHOD OF OPERATION von Li, Tin-Ho, Bianda, Enea, Ho, Ngai-Man, Huusari, Juha

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FULL-BRIDGE INVERTER WITH UNIPOLAR SWITCHING SCHEME AND ITS METHOD OF OPERATION von Li, Tin-Ho, Bianda, Enea, Ho, Ngai-Man, Huusari, Juha

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