Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations von Fan, Linjie, Bi, Jinshun, Xi, Kai, Yan, Gangping

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Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing von Wang, Qiang, Luo, Ren, Wang, Yankun, Fang, Wencheng, Jiang, Luyue, Liu, Yangyang, Wang, Ruobing, Dai, Liyan, Zhao, Jinyan, Bi, Jinshun, Liu, Zenghui, Zhao, Libo, Jiang, Zhuangde, Song, Zhitang, Schwarzkopf, Jutta, Schroeder, Thomas, Wu, Shengli, Ye, Zuo‐Guang, Ren, Wei, Song, Sannian, Niu, Gang

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Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations von Fan, Linjie, Bi, Jinshun, Xi, Kai, Majumdar, Sandip, Li, Bo

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Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction von Xi, Kai, Bi, Jinshun, Chu, Jiamin, Xu, Gaobo, Li, Bo, Wang, Haibin, Liu, Ming, Sandip, Majumdar

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An RHBD Bandgap Reference Utilizing Single Event Transient Isolation Technique von Ren, Yi, Chen, Li, Bi, Jinshun

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TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory von Xu, Ziming, Bi, Jinshun, Liu, Mengxin, Zhang, Yu, Chen, Baihong, Zhang, Zijian

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Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C–V measurement von Chen, Qiyu, Yang, Xirong, Li, Zongzhen, Bi, Jinshun, Xi, Kai, Zhang, Zhenxing, Zhai, Pengfei, Sun, Youmei, Liu, Jie

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Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors von Wang, Jianjian, Bi, Jinshun, Xu, Yannan, Niu, Gang, Liu, Mengxin, Stempitsky, Viktor

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Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures von Ma, Yue, Bi, Jinshun, Wang, Hanbin, Fan, Linjie, Zhao, Biyao, Shen, Lizhi, Liu, Mengxin

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Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor von Yan, Gangping, Bi, Jinshun, Xu, Gaobo, Xi, Kai, Li, Bo, Fan, Linjie, Yin, Huaxiang

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Long‐term and short‐term plasticity independently mimicked in highly reliable Ru‐doped Ge2Sb2Te5 electronic synapses von Wang, Qiang, Wang, Yachuan, Wang, Yankun, Jiang, Luyue, Zhao, Jinyan, Song, Zhitang, Bi, Jinshun, Zhao, Libo, Jiang, Zhuangde, Schwarzkopf, Jutta, Wu, Shengli, Zhang, Bin, Ren, Wei, Song, Sannian, Niu, Gang

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The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs von Gu, Song, Liu, Jie, Bi, Jinshun, Zhao, Fazhan, Zhang, Zhangang, Xi, Kai, Peng, Kai, Zhang, Yingjun

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Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing von Zhao, Biyao, Yan, Yunting, Bi, Jinshun, Xu, Gaobo, Xu, Yannan, Yang, Xueqin, Fan, Linjie, Liu, Mengxin

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Reliable Ge2Sb2Te5 based phase-change electronic synapses using carbon doping and programmed pulses von Wang, Qiang, Niu, Gang, Wang, Ruobing, Luo, Ren, Ye, Zuo-Guang, Bi, Jinshun, Li, Xi, Song, Zhitang, Ren, Wei, Song, Sannian

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Boosting flexible electronics with integration of two‐dimensional materials von Hou, Chongyang, Zhang, Shuye, Liu, Rui, Gemming, Thomas, Bachmatiuk, Alicja, Zhao, Hongbin, Jia, Hao, Huang, Shirong, Zhou, Weijia, Xu, Jian‐Bin, Pang, Jinbo, Rümmeli, Mark H., Bi, Jinshun, Liu, Hong, Cuniberti, Gianaurelio

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SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology von Wang, Haibin, Sheng, Ao, Wang, Shiqi, Bi, Jinshun, Chen, Li, Liu, Xiaofeng

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Characteristics of HfO2/Hf-based bipolar resistive memories von 毕津顺 韩郑生

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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs von Lovshenko, I. Yu, Voronov, A. Yu, Roshchenko, P. S., Ternov, R. E., Galkin, Ya. D., Kunts, A. V., Stempitsky, V. R., Bi, Jinshun

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Superlight Ambient Temperature Reversible Hydrogen Storage Media Based on Alkali and Alkali Earth Metal-Functionalized 2D Square-Octagon BCN Monolayer von Zhang, Liang, Ren, Jie, Chen, Xihao, Bi, Jinshun, Liu, Xuefei

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Single- and Multiple-Event Induced Upsets in 2/ 1T1R RRAM von Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Mendenhall, Marcus H., Alles, Michael L., Jinshun Bi, En Xia Zhang, Linten, Dimitri, Jurzak, Malgorzata, Fantini, Andrea

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