Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs von Mulaosmanovic, Halid, Muller, Franz, Lederer, Maximilian, Ali, Tarek, Hoffmann, Raik, Seidel, Konrad, Zhou, Haidi, Ocker, Johannes, Mueller, Stefan, Dunkel, Stefan, Kleimaier, Dominik, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

Volltext

Hardware functional obfuscation with ferroelectric active interconnects von Yu, Tongguang, Xu, Yixin, Deng, Shan, Zhao, Zijian, Jao, Nicolas, Kim, You Sung, Duenkel, Stefan, Beyer, Sven, Ni, Kai, George, Sumitha, Narayanan, Vijaykrishnan

Volltext

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array von Reis, Dayane, Datta, Suman, Niemier, Michael T., Hu, Xiaobo Sharon, Ni, Kai, Chakraborty, Wriddhi, Yin, Xunzhao, Trentzsch, Martin, Dunkel, Stefan, Melde, Thomas, Muller, Johannes, Beyer, Sven

Volltext

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction von Lederer, Maximilian, Kaempfe, Thomas, Vogel, Norman, Utess, Dirk, Volkmann, Beate, Ali, Tarek, Olivo, Ricardo, Mueller, Johannes, Beyer, Sven, Trentzsch, Martin, Seidel, Konrad, Eng, Lukas M.

Volltext

Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory von Breyer, Evelyn T., Mulaosmanovic, Halid, Trommer, Jens, Melde, Thomas, Dunkel, Stefan, Trentzsch, Martin, Beyer, Sven, Slesazeck, Stefan, Mikolajick, Thomas

Volltext

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview von Raffel, Yannick, Müller, Franz, Thunder, Sunanda, Sk, Masud Rana, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Chakrabarti, Bhaswar, Kämpfe, Thomas, De, Sourav

Volltext

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Acc... von Parmar, Vivek, Müller, Franz, Hsuen, Jing-Hua, Kingra, Sandeep Kaur, Laleni, Nellie, Raffel, Yannick, Lederer, Maximilian, Vardar, Alptekin, Seidel, Konrad, Soliman, Taha, Kirchner, Tobias, Ali, Tarek, Dünkel, Stefan, Beyer, Sven, Wu, Tian-Li, De, Sourav, Suri, Manan, Kämpfe, Thomas

Volltext

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor von Dahan, Mor Mordechai, Mulaosmanovic, Halid, Levit, Or, Dünkel, Stefan, Beyer, Sven, Yalon, Eilam

Volltext

Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read von Mulaosmanovic, Halid, Kleimaier, Dominik, Dünkel, Stefan, Beyer, Sven, Mikolajick, Thomas, Slesazeck, Stefan

Volltext

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs von Deng, Shan, Zhao, Zijian, Kim, You Sung, Duenkel, Stefan, MacMahon, David, Tiwari, Ravi, Choudhury, Nilotpal, Beyer, Sven, Gong, Xiao, Kurinec, Santosh, Ni, Kai

Volltext

Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior von Mulaosmanovic, Halid, Dunkel, Stefan, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

Volltext

Ferroelectric ternary content-addressable memory for one-shot learning von Ni, Kai, Yin, Xunzhao, Laguna, Ann Franchesca, Joshi, Siddharth, Dünkel, Stefan, Trentzsch, Martin, Müller, Johannes, Beyer, Sven, Niemier, Michael, Hu, Xiaobo Sharon, Datta, Suman

Volltext

28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application von De, Sourav, Muller, Franz, Thunder, Sunanda, Abdulazhanov, Sukhrob, Laleni, Nellie, Lederer, Maximilian, Ali, Tarek, Raffel, Yannick, Dunkel, Stefan, Mojumder, Shaown, Vardar, Alptekin, Beyer, Sven, Seidel, Konrad, Kampfe, Thomas

Volltext

Origin of charges in bulk Si:HfO2 FeFET probed by nanosecond polarization measurements von Dahan, Mor Mordechai, Mulaosmanovic, Halid, Levit, Or, Dünkel, Stefan, Müller, Johannes, Beyer, Sven, Yalon, Eilam

Volltext

Ferroelectric field-effect transistors based on HfO 2 : a review von Mulaosmanovic, Halid, Breyer, Evelyn T, Dünkel, Stefan, Beyer, Sven, Mikolajick, Thomas, Slesazeck, Stefan

Volltext

Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array von De, Sourav, Muller, Franz, Laleni, Nellie, Lederer, Maximilian, Raffel, Yannick, Mojumder, Shaown, Vardar, Alptekin, Abdulazhanov, Sukhrob, Ali, Tarek, Dunkel, Stefan, Beyer, Sven, Seidel, Konrad, Kampfe, Thomas

Volltext

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications von Meihar, Paritosh, Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Mulaosmanovic, Halid, Deshpande, Veeresh, Dunkel, Stefan, Beyer, Sven, Ganguly, Udayan

Volltext

Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse von Kim, Tae-Hyeon, Phadke, Omkar, Luo, Yuan-Chun, Mulaosmanovic, Halid, Mueller, Johannes, Duenkel, Stefan, Beyer, Sven, Khan, Asif Islam, Datta, Suman, Yu, Shimeng

Volltext

Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs von Mulaosmanovic, Halid, Muller, Franz, Lederer, Maximilian, Ali, Tarek, Hoffmann, Raik, Seidel, Konrad, Zhou, Haidi, Ocker, Johannes, Mueller, Stefan, Dunkel, Stefan, Kleimaier, Dominik, Muller, Johannes, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

Volltext

Frequency Mixing with HfO 2 -Based Ferroelectric Transistors von Mulaosmanovic, Halid, Dünkel, Stefan, Trentzsch, Martin, Beyer, Sven, Breyer, Evelyn T., Mikolajick, Thomas, Slesazeck, Stefan

Volltext