(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes von Widiez, Julie, Hartmann, Jean-Michel, Mazen, Frédéric, Sollier, Sébastien, Veytizou, Christelle, Bogumilowicz, Yann, Augendre, Emmanuel, Martin, Mickael, Gonzatti, Frédéric, Roure, Marie-Christine, Duvernay, Julien, Loup, Virginie, Euvrard-Colnat, Catherine, Seignard, Aurélien, Baron, Thierry, Cipro, Romain, Bassani, Franck, Papon, Anne-Marie, Guedj, Cyril, Huyet, Isabelle, Rivoire, Maurice, Besson, Pascal, Figuet, Christophe, Schwarzenbach, Walter, Delprat, Daniel, Signamarcheix, Thomas

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H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces von Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew

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InGaAs-OI Substrate Fabrication on a 300 mm Wafer von Sollier, Sebastien, Widiez, Julie, Gaudin, Gweltaz, Mazen, Frederic, Baron, Thierry, Martin, Mickail, Roure, Marie-Christine, Besson, Pascal, Morales, Christophe, Beche, Elodie, Fournel, Frank, Favier, Sylvie, Salaun, Amelie, Gergaud, Patrice, Cordeau, Maryline, Veytizou, Christellle, Ecarnot, Ludovic, Delprat, Daniel, Radu, Ionut, Signamarcheix, Thomas

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H$_3$PO$_4$-based wet chemical etching for recovery of dry-etched GaN surfaces von Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew

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Impact of Megasonic Activation with Different Chemistries on Silicon Surface in Single Wafer Tool von Besson, Pascal, Salvetat, Thierry, Petitdidier, Sébastien, Briend, Guillaume

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Nearly Anhydrous Undissociated HF for the Removal of Hf / Ta / Zr Based Polymers after Plasma Etch, Selectively to Aluminum von Cazes, Marine, Broussous, Lucile, Garnier, Philippe, Pizzetti, Christian, Gabette, Laurence, Besson, Pascal

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Orchestre symphonique, polyphonie culturelle et sociale von Ghesquière, Hélène, Besson, Pascal

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Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues von Garnier, Philippe, Daviot, Jérôme, Pizzetti, Christian, Broussous, Lucile, Besson, Pascal, Gabette, Laurence, Cazes, M.

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Copper Seed Layer Wet Etching for 3D Integration von Gabette, Laurence, Kachtouli, Riadh, Segaud, Roselyne, Besson, Pascal

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Chemical Treatments for Native Oxides Removal of GaAs Wafers von Rebaud, Mickaël, Roure, Marie-Christine, Loup, Virginie, Rodriguez, Philippe, Martinez, Eugénie, Besson, Pascal

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Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment von Rebaud, Mickaël, Fontaine, Hervé, Besson, Pascal, Vialle, Sylvain, Roure, Marie Christine

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Transfer of Ultra-Thin Semi-Conductor Films onto Flexible Substrates von Montméat, Pierre, De Nigris Brandolisi, Isadora, Tardif, Samuel, Enot, Thierry, Enyedi, Gregory, Kachtouli, Riadh, Besson, Pascal, Rieutord, François, Fournel, Frank

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300 mm SiGe-On-Insulator Substrates with High Ge Content (70%) Fabricated Using the Smart Cut™ Technology von Widiez, Julie, Veytizou, Christelle, Hartmann, Jean-Michel, Loup, Virginie, Besson, Pascal, Baumel, Nicolas, Figuet, Christophe, Huyet, Isabelle, Mazen, Frédéric, Schwarzenbach, Walter, Tempesta, Catherine, Ecarnot, Ludovic

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Digital Etching of GaAs Materials: Comparison of Oxidation Treatments von Enyedi, Virginie, Rebaud, Mickaël, Martinez, Eugénie, Toselli, Laura, Besson, Pascal, Borowik, Lukasz, Roure, Marie Christine

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Backside and Bevel Contamination Removal von Royer, Agnes, Besson, Pascal, Jourdan, Marine, Roure, Marie Christine, Kachtouli, Riadh, Gabette, Laurence, Loup, Virginie

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Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry von Carlier, J., Gabette, L., Besson, Pascal, Virgilio, C., Garnier, Philippe, Broussous, Lucile, Thomy, V., Toubal, M., Nongaillard, B., Campistron, P.

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Si and SiGe Alloys Wet Etching Using TMAH Chemistry von Loup, Virginie, Gabette, Laurence, Roure, Marie-Christine, Kachtouli, Riadh, Jourdan, Marine, Besson, Pascal, Petitdidier, Sebastien

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(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities von Gaben, Loïc, Barraud, Sylvain, Samson, Marie-Pierre, Jaud, Marie-Anne, Martinie, Sébastien, Rozeau, Olivier, Lacord, Joris, Arvet, Christian, Vizioz, Christian, Bustos, Jessy, Dallery, Jacques-Alexandre, Pauliac, Sébastien, Balan, Viorel, Euvrard-Colnat, Catherine, Perrot, Cédric, Loup, Virginie, Besson, Pascal, Hartmann, Jean-Michel, Monfray, Stéphane, Boeuf, Frédéric, Skotnicki, Thomas, Balestra, Francis, Vinet, Maud

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(Invited) Direct Bonding: A Key Enabler for 3D Monolithic Integration von Brunet, Laurent, Batude, Perrine, Fournel, Frank, Benaissa, Lamine, Fenouillet-Beranger, Claire, Pasini, Luca, Deprat, Fabien, Previtali, Bernard, Ponthenier, Fabienne, Seignard, Aurélien, Euvrard-Colnat, Catherine, Rivoire, Maurice, Besson, Pascal, Arvet, Christian, Beche, Elodie, Rozeau, Olivier, Billoint, Olivier, Turkyilmaz, Ogun, Clermidy, Fabien, Signamarcheix, Thomas, Vinet, Maud

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High Mobility Materials on Insulator for Advanced Technology Nodes von Schwarzenbach, Walter, Figuet, Christophe, Delprat, Daniel, Veytizou, Christelle, Huyet, Isabelle, Tempesta, Catherine, Ecarnot, Ludovic, Widiez, Julie, Loup, Virginie, Hartmann, Jean-Michel, Besson, Pascal, Deguet, Chrystel, Mazen, Frédéric, Nguyen, Bich-Yen, Maleville, Christophe

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