Raman spectroscopy as probe of nanometre-scale strain variations in graphene von Neumann, C., Reichardt, S., Venezuela, P., Drögeler, M., Banszerus, L., Schmitz, M., Watanabe, K., Taniguchi, T., Mauri, F., Beschoten, B., Rotkin, S. V., Stampfer, C.

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Observation of the Spin-Orbit Gap in Bilayer Graphene by One-Dimensional Ballistic Transport von Banszerus, L, Frohn, B, Fabian, T, Somanchi, S, Epping, A, Müller, M, Neumaier, D, Watanabe, K, Taniguchi, T, Libisch, F, Beschoten, B, Hassler, F, Stampfer, C

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Observation of long spin-relaxation times in bilayer graphene at room temperature von Yang, T-Y, Balakrishnan, J, Volmer, F, Avsar, A, Jaiswal, M, Samm, J, Ali, S R, Pachoud, A, Zeng, M, Popinciuc, M, Güntherodt, G, Beschoten, B, Özyilmaz, B

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Limitations to carrier mobility and phase-coherent transport in bilayer graphene von Engels, S, Terrés, B, Epping, A, Khodkov, T, Watanabe, K, Taniguchi, T, Beschoten, B, Stampfer, C

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Impact of Many-Body Effects on Landau Levels in Graphene von Sonntag, J, Reichardt, S, Wirtz, L, Beschoten, B, Katsnelson, M I, Libisch, F, Stampfer, C

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Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments von Volmer, F., Drögeler, M., Maynicke, E., von den Driesch, N., Boschen, M. L., Güntherodt, G., Stampfer, C., Beschoten, B.

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Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles von Schäpers, A, Sonntag, J, Valerius, L, Pestka, B, Strasdas, J, Watanabe, K, Taniguchi, T, Wirtz, L, Morgenstern, M, Beschoten, B, Dolleman, R J, Stampfer, C

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Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers von Weyrich, C, Drögeler, M, Kampmeier, J, Eschbach, M, Mussler, G, Merzenich, T, Stoica, T, Batov, I E, Schubert, J, Plucinski, L, Beschoten, B, Schneider, C M, Stampfer, C, Grützmacher, D, Schäpers, Th

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Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs von Kuhlen, S, Schmalbuch, K, Hagedorn, M, Schlammes, P, Patt, M, Lepsa, M, Güntherodt, G, Beschoten, B

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Fractional quantum Hall effect in CVD-grown graphene von Schmitz, M, Ouaj, T, Winter, Z, Rubi, K, Watanabe, K, Taniguchi, T, Zeitler, U, Beschoten, B, Stampfer, C

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Electrical spin injection in a ferromagnetic semiconductor heterostructure von Ohno, Y., Young, D. K., Beschoten, B., Matsukura, F., Ohno, H., Awschalom, D. D.

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Domain state model for exchange bias. I. Theory von Nowak, U., Usadel, K. D., Keller, J., Miltényi, P., Beschoten, B., Güntherodt, G.

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Intervalley dark trion states with spin lifetimes of 150 ns in WSe2 von Volmer, F, Pissinger, S, Ersfeld, M, Kuhlen, S, Stampfer, C, Beschoten, B

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All-electrical time-resolved spin generation and spin manipulation in n-InGaAs von Stepanov, I., Kuhlen, S., Ersfeld, M., Lepsa, M., Beschoten, B.

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Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy von Dhar, S., Brandt, O., Trampert, A., Däweritz, L., Friedland, K. J., Ploog, K. H., Keller, J., Beschoten, B., Güntherodt, G.

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Diluted antiferromagnets in exchange bias: proof of the domain state model von Miltenyi, P, Gierlings, M, Keller, J, Beschoten, B, Guntherodt, G, Nowak, U, Usadel, KD

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Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes von Volmer, F., Drögeler, M., Güntherodt, G., Stampfer, C., Beschoten, B.

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Zitterbewegung of Spin Split Electrons von Tarasenko, S. A., Poshakinskiy, A. V., Ivchenko, E. L., Stepanov, I., Ersfeld, M., Lepsa, M., Beschoten, B.

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Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K von Dhar, S., Pérez, L., Brandt, O., Trampert, A., Ploog, K. H., Keller, J., Beschoten, B.

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Schmalbuch et al. Reply von Schmalbuch, K, Göbbels, S, Schäfers, Ph, Rodenbücher, Ch, Schlammes, P, Schäpers, Th, Lepsa, M, Güntherodt, G, Beschoten, B

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