Towards forming-free resistive switching in oxygen engineered HfO2−x von Sharath, S. U., Bertaud, T., Kurian, J., Hildebrandt, E., Walczyk, C., Calka, P., Zaumseil, P., Sowinska, M., Walczyk, D., Gloskovskii, A., Schroeder, T., Alff, L.

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Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures von Sowinska, M., Bertaud, T., Walczyk, D., Thiess, S., Schubert, M. A., Lukosius, M., Drube, W., Walczyk, Ch, Schroeder, T.

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Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories von Sharath, S U, Kurian, J, Komissinskiy, P, Hildebrandt, E, Bertaud, T, Walczyk, C, Calka, P, Alff, L

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Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material von Bertaud, T., Walczyk, D., Walczyk, Ch, Kubotsch, S., Sowinska, M., Schroeder, T., Wenger, Ch, Vallée, C., Gonon, P., Mannequin, C., Jousseaume, V., Grampeix, H.

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells von WALCZYK, D, WALCZYK, Ch, SCHROEDER, T, BERTAUD, T, SOWINSKA, M, LUKOSIUS, M, FRASCHKE, M, TILLACK, B, WENGER, Ch

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Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors von BERTAUD, T, BERMOND, C, LACREVAZ, T, VALLEE, C, MORAND, Y, FLECHET, B, FARCY, A, GROS-JEAN, M, BLONKOWSKI, S

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Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration von Bertaud, T., Defay, E., Bermond, C., Lacrevaz, T., Abergel, J., Salem, B., Capraro, S., Flechet, B.

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Thickness independent reduced forming voltage in oxygen engineered HfO 2 based resistive switching memories von Sharath, S. U., Kurian, J., Komissinskiy, P., Hildebrandt, E., Bertaud, T., Walczyk, C., Calka, P., Schroeder, T., Alff, L.

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Resistive switching of Ti/HfO2-based memory devices: impact of the atmosphere and the oxygen partial pressure von Bertaud, T, Sowinska, M, Walczyk, D, Walczyk, Ch, Kubotsch, S, Wenger, Ch, Schroeder, T

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Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories von Sharath, S. U., Kurian, J., Komissinskiy, P., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Schroeder, T., Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus

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Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors von BERTAUD, Thomas, BLONKOWSKI, Serge, BERMOND, Cédric, VALLEE, Christophe, GONON, Patrice, GROS-JEAN, Michaël, FLECHET, Bernard

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Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO 2 -based resistive switching structures von Sowinska, M., Bertaud, T., Walczyk, D., Thiess, S., Schubert, M. A., Lukosius, M., Drube, W., Walczyk, Ch, Schroeder, T.

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Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x} von Sharath, S. U., Kurian, J., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Zaumseil, P., Sowinska, M., Walczyk, D., Gloskovskii, A., Schroeder, T., Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus

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Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices von Walczyk, C., Walczyk, D., Schroeder, T., Bertaud, T., Sowinska, M., Lukosius, M., Fraschke, M., Wolansky, D., Tillack, B., Miranda, E., Wenger, C.

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(Invited) HfO2-Based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays von Bertaud, Thomas, Walczyk, Damian, Sowinska, Malgorzata, Wolansky, Dirk, Tillack, Bernd, Schoof, Gunter, Stikanov, Valery, Wenger, Christian, Thiess, Sebastian, Schroeder, Thomas, Walczyk, Christian

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Electrical Characterization of Advanced MIM Capacitors With ZrO2 Insulator for High-Density Packaging and RF Applications von BERTAUD, Thomas, BERMOND, Cedric, BLONKOWSKI, Serge, VALLEE, Christophe, LACREVAZ, Thierry, FARCY, Alexis, GROS-JEAN, Mickael, FLECHET, Bernard

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Frequency Effect on Voltage Linearity of \hbox-Based RF Metal-Insulator-Metal Capacitors von Bertaud, T., Blonkowski, S., Bermond, C., Vallee, C., Gonon, P., Gros-Jean, M., Flechet, B.

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Atomic Layer Deposition of Thin Oxide Films for Resistive Switching von Fröhlich, Karol, Jančovič, Peter, Hudec, Boris, Dérer, Jan, Paskaleva, Albena, Bertaud, Thomas, Schroeder, Thomas

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Resistive switching characteristics of CMOS embedded HfO sub(2-based 1T1R cells) von Walczyk, D, Walczyk, Ch, Schroeder, T, Bertaud, T, Sowinska, M, Lukosius, M, Fraschke, M, Tillack, B, Wenger, Ch

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Resistive switching characteristics of CMOS embedded HfO 2-based 1T1R cells von Walczyk, D., Walczyk, Ch, Schroeder, T., Bertaud, T., Sowińska, M., Lukosius, M., Fraschke, M., Tillack, B., Wenger, Ch

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